Electrical resistivity of a highly strained sample of potassium

Meir Danino, Moshe Kaveh, Nathan Wiser

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The recent data for the electron-phonon scattering contribution to the electrical resistivity of a very strained sample of potassium are considerably higher than all previously reported values. It is shown that these higher values are due to the partial quenching of phonon drag by phonon-dislocation scattering. The calculation of the electron-phonon scattering term is carried out, taking explicit account of phonon-dislocation scattering. The resulting values are in excellent agreement with the measured data.

Original languageEnglish
Pages (from-to)907-908
Number of pages2
JournalPhysica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
Issue number1-3
StatePublished - 1981


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