TY - JOUR
T1 - Electrical resistivity of a highly strained sample of potassium
AU - Danino, Meir
AU - Kaveh, Moshe
AU - Wiser, Nathan
PY - 1981
Y1 - 1981
N2 - The recent data for the electron-phonon scattering contribution to the electrical resistivity of a very strained sample of potassium are considerably higher than all previously reported values. It is shown that these higher values are due to the partial quenching of phonon drag by phonon-dislocation scattering. The calculation of the electron-phonon scattering term is carried out, taking explicit account of phonon-dislocation scattering. The resulting values are in excellent agreement with the measured data.
AB - The recent data for the electron-phonon scattering contribution to the electrical resistivity of a very strained sample of potassium are considerably higher than all previously reported values. It is shown that these higher values are due to the partial quenching of phonon drag by phonon-dislocation scattering. The calculation of the electron-phonon scattering term is carried out, taking explicit account of phonon-dislocation scattering. The resulting values are in excellent agreement with the measured data.
UR - http://www.scopus.com/inward/record.url?scp=0019600436&partnerID=8YFLogxK
U2 - 10.1016/0378-4363(81)90757-9
DO - 10.1016/0378-4363(81)90757-9
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AN - SCOPUS:0019600436
SN - 0378-4363
VL - 108
SP - 907
EP - 908
JO - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
JF - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
IS - 1-3
ER -