Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices

Keyphrases

• Electrical Control 100%
• Channel Thickness 100%
• Control Simulation 100%
• Near-infrared Emission 100%
• Light Emission 100%
• SOI MOSFET 100%
• Quantum Well Devices 100%
• Emission Spectrum 50%
• Optical Properties 50%
• Light Intensity 50%
• Electrically Controlled 50%
• Quantum Well 50%
• Applied Voltage 50%
• Electrical Properties 50%
• MOSFET 50%
• Quantum Well Structure 50%
• Ultra-high Speed 50%
• Silicon Photonics 50%
• Oxide Layer 50%
• Near-infrared Radiation 50%
• Drain Voltage 50%
• Indirect Band Gap 50%
• Radiative Recombination 50%
• Ultrathin Silicon 50%
• Silicon Layer 50%
• Peak Emissions 50%
• Recessed Channel 50%
• Special Geometry 50%
• Optical Networking 50%
• Gate Recess 50%
• Silicon Quantum Well 50%

Physics

• Field Effect Transistor 100%
• Near Infrared 100%
• Quantum Wells 100%
• Control Simulation 100%
• Light Emission 66%
• Optical Properties 33%
• Electrical Properties 33%
• Silicon Photonics 33%
• Metal Oxide Semiconductor 33%
• Luminous Intensity 33%
• Energy Gaps (Solid State) 33%
• Near Infrared Radiation 33%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Quantum Well 100%
• Light Emission 66%
• Silicon Layer 33%
• Oxide Layer 33%
• Emitted Light 33%
• Drain Voltage 33%
• Applied Voltage 33%
• Infrared Radiation 33%
• Coupled Device 33%
• Emission Wavelength 33%
• Silicon Photonics 33%
• Radiative Recombination 33%