Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices

Michael Bendayan, Roi Sabo, Roee Zolberg, Yaakov Mandelbaum, Avraham Chelly, Avi Karsenty

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In the race to realize ultrahigh-speed processors, silicon photonics research is part of the efforts. Overcoming the silicon indirect bandgap with special geometry, we developed a concept of a metal-oxide-semiconductor field-effect transistor, based on a silicon quantum well structure that enables control of light emission. This quantum well consists of a recessed ultrathin silicon layer, obtained by a gate-recessed channel and limited between two oxide layers. The device's coupled optical and electrical properties have been simulated for channel thicknesses, varying from 2 to 9 nm. The results show that this device can emit near infrared radiation in the 1 to 2μm range, compatible with the optical networking spectrum. The emitted light intensity can be electrically controlled by the drain voltage Vds while the peak emission wavelength depends on the channel thickness and slightly on Vds. Moreover, the location of the radiative recombination source inside the channel, responsible for the light emission, is also controllable through the applied voltages.

Original languageEnglish
Article number036016
JournalJournal of Nanophotonics
Volume11
Issue number3
DOIs
StatePublished - 1 Jul 2017

Bibliographical note

Publisher Copyright:
© The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

Keywords

  • Silicon-on-Insulator metal-oxide-semiconductor field-effect transistor
  • light emission
  • optical communication
  • optoelectronic effect
  • quantum well
  • simulation

Fingerprint

Dive into the research topics of 'Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices'. Together they form a unique fingerprint.

Cite this