Electric field-induced junctions in epitaxial layers of CuInSe2

Konstantin Gartsman, David Cahen, Roland Scheer

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Epitaxial films of CuInSe2 on Si(111) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by efficient separation and collection of electron beam-induced charge carriers. The movable tip allows for scribing of these junction regions. The junctions can be explained by symmetrical p/p+ /n/p+ /p regions formed within the CuInSe2 epilayers. The reported method presents an alternate way for junction patterning in two dimensions.

Original languageEnglish
Pages (from-to)2919-2921
Number of pages3
JournalApplied Physics Letters
Issue number18
StatePublished - 29 Oct 2001
Externally publishedYes


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