Electric field-induced junctions in epitaxial layers of CuInSe2

Konstantin Gartsman; David Cahen; Roland Scheer

doi:10.1063/1.1415040

Electric field-induced junctions in epitaxial layers of CuInSe₂

Konstantin Gartsman, David Cahen, Roland Scheer

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Epitaxial films of CuInSe₂ on Si(111) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by efficient separation and collection of electron beam-induced charge carriers. The movable tip allows for scribing of these junction regions. The junctions can be explained by symmetrical p/p⁺ /n/p⁺ /p regions formed within the CuInSe₂ epilayers. The reported method presents an alternate way for junction patterning in two dimensions.

Original language	English
Pages (from-to)	2919-2921
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	18
DOIs	https://doi.org/10.1063/1.1415040
State	Published - 29 Oct 2001
Externally published	Yes

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Electric field-induced junctions in epitaxial layers of CuInSe₂

Abstract

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