Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

A. Tarun Sharma; Shahnawaz; Sandeep Kumar; Yashpal S. Katharria; Dinakar Kanjilal

doi:10.1016/j.apsusc.2007.06.027

Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

A. Tarun Sharma, Shahnawaz, Sandeep Kumar, Yashpal S. Katharria, Dinakar Kanjilal

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Metal-semiconductor diode of Au/n-GaAs is studied under the irradiation of swift heavy ion (SHI) beam (80 MeV ¹⁶ O ⁶⁺ ), using in situ current-voltage characterization technique. The diode parameters like ideality factor, barrier height, and leakage current are observed to vary with irradiation fluence. Significantly, the diode performance improves at a high fluence of 2 × 10 ¹³ ions cm ^-2 with a large decrease of reverse leakage current in comparison to the original as deposited sample. The Schottky barrier height (SBH) also increases with fluence. At a high irradiation fluence of 5 × 10 ¹³ ions cm ^-2 the SBH (0.62 ± 0.01 eV) is much larger than that of the as deposited sample (0.55 ± 0.01 eV). The diode parameters remain stable over a large range of irradiation up to fluence of 8 × 10 ¹³ ions cm ^-2 . A prominent annealing effect of the swift ion beam owing to moderate electronic excitation and high ratio of electronic energy loss to the nuclear loss is found to be responsible for the improvement in diode characteristics.

Original language	English
Pages (from-to)	459-463
Number of pages	5
Journal	Applied Surface Science
Volume	254
Issue number	2
DOIs	https://doi.org/10.1016/j.apsusc.2007.06.027
State	Published - 15 Nov 2007
Externally published	Yes

Keywords

Barrier height
Energy loss
in situ I-V
Reverse leakage current
Schottky diodes

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10.1016/j.apsusc.2007.06.027

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title = "Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes",

abstract = " Metal-semiconductor diode of Au/n-GaAs is studied under the irradiation of swift heavy ion (SHI) beam (80 MeV 16 O 6+ ), using in situ current-voltage characterization technique. The diode parameters like ideality factor, barrier height, and leakage current are observed to vary with irradiation fluence. Significantly, the diode performance improves at a high fluence of 2 × 10 13 ions cm -2 with a large decrease of reverse leakage current in comparison to the original as deposited sample. The Schottky barrier height (SBH) also increases with fluence. At a high irradiation fluence of 5 × 10 13 ions cm -2 the SBH (0.62 ± 0.01 eV) is much larger than that of the as deposited sample (0.55 ± 0.01 eV). The diode parameters remain stable over a large range of irradiation up to fluence of 8 × 10 13 ions cm -2 . A prominent annealing effect of the swift ion beam owing to moderate electronic excitation and high ratio of electronic energy loss to the nuclear loss is found to be responsible for the improvement in diode characteristics.",

keywords = "Barrier height, Energy loss, in situ I-V, Reverse leakage current, Schottky diodes",

author = "Sharma, {A. Tarun} and Shahnawaz and Sandeep Kumar and Katharria, {Yashpal S.} and Dinakar Kanjilal",

year = "2007",

month = nov,

day = "15",

doi = "10.1016/j.apsusc.2007.06.027",

language = "אנגלית",

volume = "254",

pages = "459--463",

journal = "Applied Surface Science",

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T1 - Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

AU - Sharma, A. Tarun

AU - Shahnawaz,

AU - Kumar, Sandeep

AU - Katharria, Yashpal S.

AU - Kanjilal, Dinakar

PY - 2007/11/15

Y1 - 2007/11/15

N2 - Metal-semiconductor diode of Au/n-GaAs is studied under the irradiation of swift heavy ion (SHI) beam (80 MeV 16 O 6+ ), using in situ current-voltage characterization technique. The diode parameters like ideality factor, barrier height, and leakage current are observed to vary with irradiation fluence. Significantly, the diode performance improves at a high fluence of 2 × 10 13 ions cm -2 with a large decrease of reverse leakage current in comparison to the original as deposited sample. The Schottky barrier height (SBH) also increases with fluence. At a high irradiation fluence of 5 × 10 13 ions cm -2 the SBH (0.62 ± 0.01 eV) is much larger than that of the as deposited sample (0.55 ± 0.01 eV). The diode parameters remain stable over a large range of irradiation up to fluence of 8 × 10 13 ions cm -2 . A prominent annealing effect of the swift ion beam owing to moderate electronic excitation and high ratio of electronic energy loss to the nuclear loss is found to be responsible for the improvement in diode characteristics.

AB - Metal-semiconductor diode of Au/n-GaAs is studied under the irradiation of swift heavy ion (SHI) beam (80 MeV 16 O 6+ ), using in situ current-voltage characterization technique. The diode parameters like ideality factor, barrier height, and leakage current are observed to vary with irradiation fluence. Significantly, the diode performance improves at a high fluence of 2 × 10 13 ions cm -2 with a large decrease of reverse leakage current in comparison to the original as deposited sample. The Schottky barrier height (SBH) also increases with fluence. At a high irradiation fluence of 5 × 10 13 ions cm -2 the SBH (0.62 ± 0.01 eV) is much larger than that of the as deposited sample (0.55 ± 0.01 eV). The diode parameters remain stable over a large range of irradiation up to fluence of 8 × 10 13 ions cm -2 . A prominent annealing effect of the swift ion beam owing to moderate electronic excitation and high ratio of electronic energy loss to the nuclear loss is found to be responsible for the improvement in diode characteristics.

KW - Barrier height

KW - Energy loss

KW - in situ I-V

KW - Reverse leakage current

KW - Schottky diodes

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Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

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Keywords

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