Effects of seeding over the microstructure and stresses of diamond thin films

S. Gupta; G. Morell; R. S. Katiyar; D. R. Gilbert; R. K. Singh

Effects of seeding over the microstructure and stresses of diamond thin films

S. Gupta, G. Morell, R. S. Katiyar, D. R. Gilbert, R. K. Singh

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We have studied diamond films grown by electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) at low pressure (1.0 Torr) and temperatures (550-700 °C). These films were grown on seeded Si (111) substrates with different diamond seed densities (0.225, 1.5, 2.3, and 3.1×10⁹ nuclei/cm²). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS) were employed to investigate the crystalline quality, diamond yield, and stresses developed in the films as a function of seeding density. Thermal interfacial stress, interactions across grain boundaries, and internal stress were considered in order to account for the total stress observed from the Raman band. We present correlations among seed density, relative amount of non-sp³ phase, O/C ratio, and total intrinsic stress.

Original language	English
Pages (from-to)	337-342
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	594
State	Published - 2000
Externally published	Yes
Event	Thin Films-Stress and Machanical Properties VIII - Boston, MA, USA Duration: 29 Nov 1999 → 3 Dec 1999

Cite this

@article{fc68f3d0e252483a973381cb98f3efd9,

title = "Effects of seeding over the microstructure and stresses of diamond thin films",

abstract = "We have studied diamond films grown by electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) at low pressure (1.0 Torr) and temperatures (550-700 °C). These films were grown on seeded Si (111) substrates with different diamond seed densities (0.225, 1.5, 2.3, and 3.1×109 nuclei/cm2). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS) were employed to investigate the crystalline quality, diamond yield, and stresses developed in the films as a function of seeding density. Thermal interfacial stress, interactions across grain boundaries, and internal stress were considered in order to account for the total stress observed from the Raman band. We present correlations among seed density, relative amount of non-sp3 phase, O/C ratio, and total intrinsic stress.",

author = "S. Gupta and G. Morell and Katiyar, {R. S.} and Gilbert, {D. R.} and Singh, {R. K.}",

year = "2000",

language = "אנגלית",

volume = "594",

pages = "337--342",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Thin Films-Stress and Machanical Properties VIII ; Conference date: 29-11-1999 Through 03-12-1999",

}

TY - JOUR

T1 - Effects of seeding over the microstructure and stresses of diamond thin films

AU - Gupta, S.

AU - Morell, G.

AU - Katiyar, R. S.

AU - Gilbert, D. R.

AU - Singh, R. K.

PY - 2000

Y1 - 2000

N2 - We have studied diamond films grown by electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) at low pressure (1.0 Torr) and temperatures (550-700 °C). These films were grown on seeded Si (111) substrates with different diamond seed densities (0.225, 1.5, 2.3, and 3.1×109 nuclei/cm2). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS) were employed to investigate the crystalline quality, diamond yield, and stresses developed in the films as a function of seeding density. Thermal interfacial stress, interactions across grain boundaries, and internal stress were considered in order to account for the total stress observed from the Raman band. We present correlations among seed density, relative amount of non-sp3 phase, O/C ratio, and total intrinsic stress.

AB - We have studied diamond films grown by electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) at low pressure (1.0 Torr) and temperatures (550-700 °C). These films were grown on seeded Si (111) substrates with different diamond seed densities (0.225, 1.5, 2.3, and 3.1×109 nuclei/cm2). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS) were employed to investigate the crystalline quality, diamond yield, and stresses developed in the films as a function of seeding density. Thermal interfacial stress, interactions across grain boundaries, and internal stress were considered in order to account for the total stress observed from the Raman band. We present correlations among seed density, relative amount of non-sp3 phase, O/C ratio, and total intrinsic stress.

UR - http://www.scopus.com/inward/record.url?scp=0033652704&partnerID=8YFLogxK

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0033652704

SN - 0272-9172

VL - 594

SP - 337

EP - 342

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Thin Films-Stress and Machanical Properties VIII

Y2 - 29 November 1999 through 3 December 1999

ER -

Effects of seeding over the microstructure and stresses of diamond thin films

Abstract

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