Abstract
This paper reports on characterization of the surface coverage of particles by in-situ lateral friction force measurement during chemical mechanical polishing. The lateral friction force apparatus was made to operate close to real CMP conditions. For these experiments a sapphire wafer of constant surface roughness was used. For both 2psi and 4psi down force we observed increase in lateral friction forces with increasing solid loading. The lateral friction forces have been found to be significantly dependent on the contact area at the wafer-pad-slurry interface, thus showing that in-situ dynamic friction force changes in the surface coverage of particles. From these results, we conclude that the enhancement of frictional force is due to increased contact area at the wafer-pad-slurry interfaces. The lateral friction force measurement can provide an understanding of wafer-pad-slurry interactions.
Original language | English |
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Pages (from-to) | M5.1.1-M5.1.6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 671 |
DOIs | |
State | Published - 2001 |
Externally published | Yes |
Event | Chemical - Mechanical Polishing 2001 - Advances and Future Challenges - San Francisco, CA, United States Duration: 18 Apr 2001 → 20 Apr 2001 |
Funding
The authors would like to acknowledge the financial support of the Engineering Research Center (ERC) for Particle Science and Technology at the University of Florida, the National Science Foundation (NSF) grant #EEC-94-02989, and the Industrial Partners of the ERC.
Funders | Funder number |
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Engineering Research Center | |
National Science Foundation | #EEC-94-02989 |
University of Florida |