Effects of particle concentration in CMP

Wonseop Choi, Seung Mahn Lee, Rajiv K. Singh

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations


This paper reports on characterization of the surface coverage of particles by in-situ lateral friction force measurement during chemical mechanical polishing. The lateral friction force apparatus was made to operate close to real CMP conditions. For these experiments a sapphire wafer of constant surface roughness was used. For both 2psi and 4psi down force we observed increase in lateral friction forces with increasing solid loading. The lateral friction forces have been found to be significantly dependent on the contact area at the wafer-pad-slurry interface, thus showing that in-situ dynamic friction force changes in the surface coverage of particles. From these results, we conclude that the enhancement of frictional force is due to increased contact area at the wafer-pad-slurry interfaces. The lateral friction force measurement can provide an understanding of wafer-pad-slurry interactions.

Original languageEnglish
Pages (from-to)M5.1.1-M5.1.6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2001
Externally publishedYes
EventChemical - Mechanical Polishing 2001 - Advances and Future Challenges - San Francisco, CA, United States
Duration: 18 Apr 200120 Apr 2001


The authors would like to acknowledge the financial support of the Engineering Research Center (ERC) for Particle Science and Technology at the University of Florida, the National Science Foundation (NSF) grant #EEC-94-02989, and the Industrial Partners of the ERC.

FundersFunder number
Engineering Research Center
National Science Foundation#EEC-94-02989
University of Florida


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