Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells

T. Reker; H. Im; L. E. Bremme; H. Choi; Y. Chung; P. C. Klipstein; Hadas Shtrikman

Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells

T. Reker, H. Im, L. E. Bremme, H. Choi, Y. Chung, P. C. Klipstein, Hadas Shtrikman

University of Oxford

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al_0.28Ga_0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.

Original language	English
Article number	056403
Pages (from-to)	564031-564034
Number of pages	4
Journal	Physical Review Letters
Volume	88
Issue number	5
State	Published - 4 Feb 2002
Externally published	Yes

Cite this

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title = "Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells",

abstract = "The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al0.28Ga0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.",

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AU - Reker, T.

AU - Im, H.

AU - Bremme, L. E.

AU - Choi, H.

AU - Chung, Y.

AU - Klipstein, P. C.

AU - Shtrikman, Hadas

PY - 2002/2/4

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N2 - The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al0.28Ga0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.

AB - The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al0.28Ga0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.

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JO - Physical Review Letters

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Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells

Abstract

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