Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells

T. Reker; H. Im; L. E. Bremme; H. Choi; Y. Chung; P. C. Klipstein; Hadas Shtrikman

Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells

T. Reker, H. Im, L. E. Bremme, H. Choi, Y. Chung, P. C. Klipstein, Hadas Shtrikman

University of Oxford

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al_0.28Ga_0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.

Original language	English
Article number	056403
Pages (from-to)	564031-564034
Number of pages	4
Journal	Physical Review Letters
Volume	88
Issue number	5
State	Published - 4 Feb 2002
Externally published	Yes

Cite this

@article{ddc8b1cdbcba4a86855975a8e7203a32,

title = "Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells",

abstract = "The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al0.28Ga0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.",

author = "T. Reker and H. Im and Bremme, {L. E.} and H. Choi and Y. Chung and Klipstein, {P. C.} and Hadas Shtrikman",

year = "2002",

month = feb,

day = "4",

language = "אנגלית",

volume = "88",

pages = "564031--564034",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "5",

}

TY - JOUR

T1 - Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells

AU - Reker, T.

AU - Im, H.

AU - Bremme, L. E.

AU - Choi, H.

AU - Chung, Y.

AU - Klipstein, P. C.

AU - Shtrikman, Hadas

PY - 2002/2/4

Y1 - 2002/2/4

N2 - The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al0.28Ga0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.

AB - The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al0.28Ga0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.

UR - http://www.scopus.com/inward/record.url?scp=0037017083&partnerID=8YFLogxK

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0037017083

SN - 0031-9007

VL - 88

SP - 564031

EP - 564034

JO - Physical Review Letters

JF - Physical Review Letters

IS - 5

M1 - 056403

ER -

Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells

Abstract

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