Effect of Y-doping on the electrical transport properties of nanocrystalline BiFeO 3

A. Mukherjee; S. Basu; G. Chakraborty; M. Pal

doi:10.1063/1.4734005

Effect of Y-doping on the electrical transport properties of nanocrystalline BiFeO ₃

A. Mukherjee
, S. Basu
, G. Chakraborty
, M. Pal

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Effect of yttrium doping on the electrical transport properties of sol-gel prepare nanocrystalline BiFeO ₃ was investigated. A comprehensive state-of-the art sophisticated instruments like x-ray diffraction, differential thermal analyzer, field emission scanning electron microscope, and HRTEM were utilized to characterize the BiFeO ₃ nanoparticles. It was observed that the values of dc activation energy calculated from Arrhenius relation increase with increase of yttrium content. The variation of ac conductivity with frequency and temperature exhibits a correlated barrier hopping conduction mechanism. The dielectric permittivity of the sample reveals an increasing tendency with the concentration of yttrium and depends on both the grain and the interfacial grain boundary resistance. The activation energies for the dielectric relaxation estimated from the modulus spectra were found to be reasonably good agreement with those obtained from dc conductivity study.

Original language	English
Article number	014321
Journal	Journal of Applied Physics
Volume	112
Issue number	1
DOIs	https://doi.org/10.1063/1.4734005
State	Published - 1 Jul 2012
Externally published	Yes

Bibliographical note

Funding Information:
The authors would like to acknowledge financial support from the Department of Science and Technology (DST), Government of India (Project No. SR/FTP/PS-66/2008). The authors also like to acknowledge the financial support from BRNS (Project No. 2011/37P/14/BRNS), Department of Atomic Energy (DAE), Government of India.

Funding

The authors would like to acknowledge financial support from the Department of Science and Technology (DST), Government of India (Project No. SR/FTP/PS-66/2008). The authors also like to acknowledge the financial support from BRNS (Project No. 2011/37P/14/BRNS), Department of Atomic Energy (DAE), Government of India.

Funders	Funder number
Department of Science and Technology, Ministry of Science and Technology, India	2011/37P/14/BRNS, SR/FTP/PS-66/2008
Department of Atomic Energy, Government of India

Access to Document

10.1063/1.4734005

Cite this

@article{29e43a74e6c94e1db3b31540cd2c474d,

title = "Effect of Y-doping on the electrical transport properties of nanocrystalline BiFeO 3 ",

abstract = "Effect of yttrium doping on the electrical transport properties of sol-gel prepare nanocrystalline BiFeO 3 was investigated. A comprehensive state-of-the art sophisticated instruments like x-ray diffraction, differential thermal analyzer, field emission scanning electron microscope, and HRTEM were utilized to characterize the BiFeO 3 nanoparticles. It was observed that the values of dc activation energy calculated from Arrhenius relation increase with increase of yttrium content. The variation of ac conductivity with frequency and temperature exhibits a correlated barrier hopping conduction mechanism. The dielectric permittivity of the sample reveals an increasing tendency with the concentration of yttrium and depends on both the grain and the interfacial grain boundary resistance. The activation energies for the dielectric relaxation estimated from the modulus spectra were found to be reasonably good agreement with those obtained from dc conductivity study.",

author = "A. Mukherjee and S. Basu and G. Chakraborty and M. Pal",

note = "Funding Information: The authors would like to acknowledge financial support from the Department of Science and Technology (DST), Government of India (Project No. SR/FTP/PS-66/2008). The authors also like to acknowledge the financial support from BRNS (Project No. 2011/37P/14/BRNS), Department of Atomic Energy (DAE), Government of India.",

year = "2012",

month = jul,

day = "1",

doi = "10.1063/1.4734005",

language = "אנגלית",

volume = "112",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Effect of Y-doping on the electrical transport properties of nanocrystalline BiFeO 3

AU - Mukherjee, A.

AU - Basu, S.

AU - Chakraborty, G.

AU - Pal, M.

N1 - Funding Information: The authors would like to acknowledge financial support from the Department of Science and Technology (DST), Government of India (Project No. SR/FTP/PS-66/2008). The authors also like to acknowledge the financial support from BRNS (Project No. 2011/37P/14/BRNS), Department of Atomic Energy (DAE), Government of India.

PY - 2012/7/1

Y1 - 2012/7/1

N2 - Effect of yttrium doping on the electrical transport properties of sol-gel prepare nanocrystalline BiFeO 3 was investigated. A comprehensive state-of-the art sophisticated instruments like x-ray diffraction, differential thermal analyzer, field emission scanning electron microscope, and HRTEM were utilized to characterize the BiFeO 3 nanoparticles. It was observed that the values of dc activation energy calculated from Arrhenius relation increase with increase of yttrium content. The variation of ac conductivity with frequency and temperature exhibits a correlated barrier hopping conduction mechanism. The dielectric permittivity of the sample reveals an increasing tendency with the concentration of yttrium and depends on both the grain and the interfacial grain boundary resistance. The activation energies for the dielectric relaxation estimated from the modulus spectra were found to be reasonably good agreement with those obtained from dc conductivity study.

AB - Effect of yttrium doping on the electrical transport properties of sol-gel prepare nanocrystalline BiFeO 3 was investigated. A comprehensive state-of-the art sophisticated instruments like x-ray diffraction, differential thermal analyzer, field emission scanning electron microscope, and HRTEM were utilized to characterize the BiFeO 3 nanoparticles. It was observed that the values of dc activation energy calculated from Arrhenius relation increase with increase of yttrium content. The variation of ac conductivity with frequency and temperature exhibits a correlated barrier hopping conduction mechanism. The dielectric permittivity of the sample reveals an increasing tendency with the concentration of yttrium and depends on both the grain and the interfacial grain boundary resistance. The activation energies for the dielectric relaxation estimated from the modulus spectra were found to be reasonably good agreement with those obtained from dc conductivity study.

UR - https://www.scopus.com/pages/publications/84864152342

U2 - 10.1063/1.4734005

DO - 10.1063/1.4734005

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84864152342

SN - 0021-8979

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 014321

ER -