Effect of the Substrate on the Ultrafast Study of Bismuth Telluride (Bi2Te3)

Roshani Singh; Pramod Kumar

doi:10.1109/wrap59682.2023.10713009

Effect of the Substrate on the Ultrafast Study of Bismuth Telluride (Bi₂Te₃)

Roshani Singh, Pramod Kumar

Indian Institute of Information Technology, Allahabad

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

To understand the effect of Glass substrate and GaN substrate on Bi₂Te₃ material, the ultrafast spectroscopic study was performed in the visible range. The outcome gives information about the energy levels, charge transfer, surface states, and carrier relaxation processes. In GaN/Bi₂Te₃ Heterojunction the larger amplitude of transient absorption spectra reveals that charge carriers are stabilized in exited energy states due to interface interaction in GaN and Bi₂Te₃.

Original language	English
Title of host publication	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350340839
DOIs	https://doi.org/10.1109/wrap59682.2023.10713009
State	Published - 2023
Externally published	Yes
Event	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023 - Prayagraj, India Duration: 7 Dec 2023 → 9 Dec 2023

Publication series

Name	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023

Conference

Conference	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023
Country/Territory	India
City	Prayagraj
Period	7/12/23 → 9/12/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

Bismuth telluride
Substrate effect
Topological Insulator
Ultrafast Study
charge carrier dynamics

Access to Document

10.1109/wrap59682.2023.10713009

Cite this

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title = "Effect of the Substrate on the Ultrafast Study of Bismuth Telluride (Bi2Te3)",

abstract = "To understand the effect of Glass substrate and GaN substrate on Bi2Te3 material, the ultrafast spectroscopic study was performed in the visible range. The outcome gives information about the energy levels, charge transfer, surface states, and carrier relaxation processes. In GaN/Bi2Te3 Heterojunction the larger amplitude of transient absorption spectra reveals that charge carriers are stabilized in exited energy states due to interface interaction in GaN and Bi2Te3.",

keywords = "Bismuth telluride, Substrate effect, Topological Insulator, Ultrafast Study, charge carrier dynamics",

author = "Roshani Singh and Pramod Kumar",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023 ; Conference date: 07-12-2023 Through 09-12-2023",

year = "2023",

doi = "10.1109/wrap59682.2023.10713009",

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Singh, R & Kumar, P 2023, Effect of the Substrate on the Ultrafast Study of Bismuth Telluride (Bi₂Te₃). in 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023. 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023, Prayagraj, India, 7/12/23. https://doi.org/10.1109/wrap59682.2023.10713009

Effect of the Substrate on the Ultrafast Study of Bismuth Telluride (Bi₂Te₃). / Singh, Roshani; Kumar, Pramod.
2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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