Effect of swift heavy ion irradiation on deep levels in Aun-Si (100) Schottky diode studied by deep level transient spectroscopy

In situ deep level transient spectroscopy has been applied to investigate the influence of 100 MeV Si7+ ion irradiation on the deep levels present in Aun-Si (100) Schottky structure in a wide fluence range from 5× 109 to 1× 1012 ions cm-2. The swift heavy ion irradiation introduces a deep level at Ec -0.32 eV. It is found that initially, trap level concentration of the energy level at Ec -0.40 eV increases with irradiation up to a fluence value of 1× 1010 cm-2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5× 1010 cm-2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.