Abstract
To understand the ceria-silica chemical mechanical polishing (CMP) mechanisms, we studied the effect of ceria slurry pH on silica removal and surface morphology. Also, in situ friction force measurements were conducted. After polishing; atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy were used to quantify the extent of the particle-substrate interaction during CMP. Our results indicate the silica removal by ceria slurries is strongly pH dependent, with the maximum occurring near the isoelectric point of the ceria slurry.
| Original language | English |
|---|---|
| Pages (from-to) | 1139-1145 |
| Number of pages | 7 |
| Journal | Journal of Materials Research |
| Volume | 20 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2005 |
| Externally published | Yes |
Funding
The authors acknowledge the financial support of the Particle Engineering Research Center (PERC) at the University of Florida, The National Science Foundation (NSF Grant EEC-94-02989), the Industrial Partners of the PERC for support of this research, Eric Lambers of the Major Analytical Instrumentation Center, Department of Materials Science and Engineering, University of Florida (Gainesville, FL), and Joodong Park, University of Florida (Gainesville, FL), for assistance with FESEM imaging.
| Funders | Funder number |
|---|---|
| Department of Materials Science and Engineering, University of Florida | |
| Joodong Park | |
| PERC | |
| National Science Foundation | EEC-94-02989 |
| University of Florida |