Effect of particle size of chemical mechanical polishing slurries for enhanced polishing with minimal defects

G. B. Basim, J. J. Adler, U. Mahajan, R. K. Singh, B. M. Moudgil

Research output: Contribution to journalArticlepeer-review

212 Scopus citations

Abstract

In this study the effects of oversize particle contamination in chemical mechanical polishing (CMP) slurries were investigated on the silica CMP process. The limits of light scattering technique were established in detecting coarse particles in a commercial silica CMP slurry using two different methods. The detection limits were set by observing the shift in particle size distribution curve or by the appearance of an additional peak in the particle size distribution curve of the baseline slurry when a known amount of coarser particles were added to it. Simultaneously, polishing tests were conducted by spiking the base slurry with coarser sol-gel silica particles at the established detection limits. It was observed that the contamination of larger panicles not only created surface damage but also changed the material removal rate. The mechanism of polishing in the presence of larger size particles is discussed as a function of particle size and concentration.

Original languageEnglish
Pages (from-to)3523-3528
Number of pages6
JournalJournal of the Electrochemical Society
Volume147
Issue number9
DOIs
StatePublished - Sep 2000
Externally publishedYes

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