Effect of Mg doping on Cu2O thin films and their behavior on the TiO2/Cu2O heterojunction solar cells

Kasra Kardarian; Daniela Nunes; Paolo Maria Sberna; Adam Ginsburg; David A. Keller; Joana Vaz Pinto; Jonas Deuermeier; Assaf Y. Anderson; Arie Zaban; Rodrigo Martins; Elvira Fortunato

doi:10.1016/j.solmat.2015.11.041

Effect of Mg doping on Cu₂O thin films and their behavior on the TiO₂/Cu₂O heterojunction solar cells

Kasra Kardarian, Daniela Nunes, Paolo Maria Sberna, Adam Ginsburg, David A. Keller, Joana Vaz Pinto, Jonas Deuermeier, Assaf Y. Anderson, Arie Zaban, Rodrigo Martins, Elvira Fortunato

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

The present work shows the effect of magnesium doping on structural, optoelectrical and electrical properties of Cu₂O thin films prepared by spray pyrolysis. The variation in the concentration of Mg shows significant impact on the final thin film properties, whereas the film doped with 0.5 at% of Mg exhibited major property improvements in comparison with the undoped thin film and among the other concentrations tested. This condition was further applied for the deposition of an absorber layer in a heterojunction solar cell array with a gradient in thicknesses of active layers to investigate the impact of changing thicknesses on the PV parameters of the solar cell. TiO₂ was used as a window layer and the 0.5 at% Cu₂O doped film as an absorber layer. The produced heterojunction solar cell array was further exposed to a rapid thermal annealing treatment. The I-V measurements show an open circuit voltage of up to 365 mV and a short circuit current density, which is dependent on absorber layer thickness, and reaches to a maximum value of 0.9 mA/cm².

Original language	English
Pages (from-to)	27-36
Number of pages	10
Journal	Solar Energy Materials and Solar Cells
Volume	147
DOIs	https://doi.org/10.1016/j.solmat.2015.11.041
State	Published - 1 Apr 2016

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Funding

This work is funded by European Comission funds through FP7 program Novel Composite Oxides by Combinatorial Material Synthesis for Next Generation All-Oxide-Photovoltaics number 309018 and partially supported by FEDER funds through the COMPETE 2020 Programme and National Funds throught FCT − Portuguese Foundation for Science and Technology under the project UID/CTM/50025/2013.

Funders	Funder number
European Comission funds
Fundação para a Ciência e a Tecnologia	UID/CTM/50025/2013
Seventh Framework Programme	309018
European Regional Development Fund
Programa Operacional Temático Factores de Competitividade

Keywords

Cuprous oxide
Heterojunction
Magnesium doping
Metal oxide semiconductors
Photoconductivity
Solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2015.11.041

Cite this

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title = "Effect of Mg doping on Cu2O thin films and their behavior on the TiO2/Cu2O heterojunction solar cells",

abstract = "The present work shows the effect of magnesium doping on structural, optoelectrical and electrical properties of Cu2O thin films prepared by spray pyrolysis. The variation in the concentration of Mg shows significant impact on the final thin film properties, whereas the film doped with 0.5 at% of Mg exhibited major property improvements in comparison with the undoped thin film and among the other concentrations tested. This condition was further applied for the deposition of an absorber layer in a heterojunction solar cell array with a gradient in thicknesses of active layers to investigate the impact of changing thicknesses on the PV parameters of the solar cell. TiO2 was used as a window layer and the 0.5 at% Cu2O doped film as an absorber layer. The produced heterojunction solar cell array was further exposed to a rapid thermal annealing treatment. The I-V measurements show an open circuit voltage of up to 365 mV and a short circuit current density, which is dependent on absorber layer thickness, and reaches to a maximum value of 0.9 mA/cm2.",

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author = "Kasra Kardarian and Daniela Nunes and {Maria Sberna}, Paolo and Adam Ginsburg and Keller, {David A.} and {Vaz Pinto}, Joana and Jonas Deuermeier and Anderson, {Assaf Y.} and Arie Zaban and Rodrigo Martins and Elvira Fortunato",

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AU - Maria Sberna, Paolo

AU - Ginsburg, Adam

AU - Keller, David A.

AU - Vaz Pinto, Joana

AU - Deuermeier, Jonas

AU - Anderson, Assaf Y.

AU - Zaban, Arie

AU - Martins, Rodrigo

AU - Fortunato, Elvira

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N2 - The present work shows the effect of magnesium doping on structural, optoelectrical and electrical properties of Cu2O thin films prepared by spray pyrolysis. The variation in the concentration of Mg shows significant impact on the final thin film properties, whereas the film doped with 0.5 at% of Mg exhibited major property improvements in comparison with the undoped thin film and among the other concentrations tested. This condition was further applied for the deposition of an absorber layer in a heterojunction solar cell array with a gradient in thicknesses of active layers to investigate the impact of changing thicknesses on the PV parameters of the solar cell. TiO2 was used as a window layer and the 0.5 at% Cu2O doped film as an absorber layer. The produced heterojunction solar cell array was further exposed to a rapid thermal annealing treatment. The I-V measurements show an open circuit voltage of up to 365 mV and a short circuit current density, which is dependent on absorber layer thickness, and reaches to a maximum value of 0.9 mA/cm2.

AB - The present work shows the effect of magnesium doping on structural, optoelectrical and electrical properties of Cu2O thin films prepared by spray pyrolysis. The variation in the concentration of Mg shows significant impact on the final thin film properties, whereas the film doped with 0.5 at% of Mg exhibited major property improvements in comparison with the undoped thin film and among the other concentrations tested. This condition was further applied for the deposition of an absorber layer in a heterojunction solar cell array with a gradient in thicknesses of active layers to investigate the impact of changing thicknesses on the PV parameters of the solar cell. TiO2 was used as a window layer and the 0.5 at% Cu2O doped film as an absorber layer. The produced heterojunction solar cell array was further exposed to a rapid thermal annealing treatment. The I-V measurements show an open circuit voltage of up to 365 mV and a short circuit current density, which is dependent on absorber layer thickness, and reaches to a maximum value of 0.9 mA/cm2.

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