Effect of interface traps on Debye thickness semiconductor films

V. Sandomirsky; A. V. Butenko; I. G. Kolobov; A. Ronen; Y. Schlesinger

doi:10.1016/j.apsusc.2005.07.039

Effect of interface traps on Debye thickness semiconductor films

V. Sandomirsky
, A. V. Butenko
, I. G. Kolobov
, A. Ronen
, Y. Schlesinger

Department of Physics - at Bar-Ilan University

Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The presence of the boundary interface trapping states and their role in determining the properties of Debye thickness thin semiconductor films, are demonstrated experimentally, using PbTe films deposited on mica. These charged states could not be observed earlier and be studied directly, because of the screening by the relatively high carrier density of the ordinary PbTe. Thin, Debye length thickness, PbTe films with a high concentration of interface trapping centers, possess an extraordinary high resistance. In this case the thermostimulated capacitor discharge method can be successfully applied to determine the energy of these levels, their carrier capture cross-sections and their donor- or acceptor-like character. The experimental results and theoretical calculations are discussed.

Original language	English
Pages (from-to)	5793-5802
Number of pages	10
Journal	Applied Surface Science
Volume	252
Issue number	16
DOIs	https://doi.org/10.1016/j.apsusc.2005.07.039
State	Published - 15 Jun 2006

Bibliographical note

Funding Information:
We acknowledge the support of this work by the Ministry of Science and Technology of the State of Israel, within the framework of the Chinese–Israeli Cooperation project 01-07-00039. The fruitful discussions with Prof. Z. Dashevsky have contributed greatly to the completion of this project. We also express our gratitude to Profs. A.Yu. Sipatov and V.V. Volubuev from the National Technical University in Kharkov, Ukraine, for providing the samples.

Funding

We acknowledge the support of this work by the Ministry of Science and Technology of the State of Israel, within the framework of the Chinese–Israeli Cooperation project 01-07-00039. The fruitful discussions with Prof. Z. Dashevsky have contributed greatly to the completion of this project. We also express our gratitude to Profs. A.Yu. Sipatov and V.V. Volubuev from the National Technical University in Kharkov, Ukraine, for providing the samples.

Funders	Funder number
Ministry of Science and Technology of the State of Israel	01-07-00039

Keywords

Debye length thickness film
Electric field effect
Interface traps
PbTe
Relaxation

Access to Document

10.1016/j.apsusc.2005.07.039

Cite this

@article{743a08485ecd414aa6758d973b57a0fa,

title = "Effect of interface traps on Debye thickness semiconductor films",

abstract = "The presence of the boundary interface trapping states and their role in determining the properties of Debye thickness thin semiconductor films, are demonstrated experimentally, using PbTe films deposited on mica. These charged states could not be observed earlier and be studied directly, because of the screening by the relatively high carrier density of the ordinary PbTe. Thin, Debye length thickness, PbTe films with a high concentration of interface trapping centers, possess an extraordinary high resistance. In this case the thermostimulated capacitor discharge method can be successfully applied to determine the energy of these levels, their carrier capture cross-sections and their donor- or acceptor-like character. The experimental results and theoretical calculations are discussed.",

keywords = "Debye length thickness film, Electric field effect, Interface traps, PbTe, Relaxation",

author = "V. Sandomirsky and Butenko, \{A. V.\} and Kolobov, \{I. G.\} and A. Ronen and Y. Schlesinger",

note = "Funding Information: We acknowledge the support of this work by the Ministry of Science and Technology of the State of Israel, within the framework of the Chinese{\textendash}Israeli Cooperation project 01-07-00039. The fruitful discussions with Prof. Z. Dashevsky have contributed greatly to the completion of this project. We also express our gratitude to Profs. A.Yu. Sipatov and V.V. Volubuev from the National Technical University in Kharkov, Ukraine, for providing the samples.",

year = "2006",

month = jun,

day = "15",

doi = "10.1016/j.apsusc.2005.07.039",

language = "אנגלית",

volume = "252",

pages = "5793--5802",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier BV",

number = "16",

}

TY - JOUR

T1 - Effect of interface traps on Debye thickness semiconductor films

AU - Sandomirsky, V.

AU - Butenko, A. V.

AU - Kolobov, I. G.

AU - Ronen, A.

AU - Schlesinger, Y.

N1 - Funding Information: We acknowledge the support of this work by the Ministry of Science and Technology of the State of Israel, within the framework of the Chinese–Israeli Cooperation project 01-07-00039. The fruitful discussions with Prof. Z. Dashevsky have contributed greatly to the completion of this project. We also express our gratitude to Profs. A.Yu. Sipatov and V.V. Volubuev from the National Technical University in Kharkov, Ukraine, for providing the samples.

PY - 2006/6/15

Y1 - 2006/6/15

N2 - The presence of the boundary interface trapping states and their role in determining the properties of Debye thickness thin semiconductor films, are demonstrated experimentally, using PbTe films deposited on mica. These charged states could not be observed earlier and be studied directly, because of the screening by the relatively high carrier density of the ordinary PbTe. Thin, Debye length thickness, PbTe films with a high concentration of interface trapping centers, possess an extraordinary high resistance. In this case the thermostimulated capacitor discharge method can be successfully applied to determine the energy of these levels, their carrier capture cross-sections and their donor- or acceptor-like character. The experimental results and theoretical calculations are discussed.

AB - The presence of the boundary interface trapping states and their role in determining the properties of Debye thickness thin semiconductor films, are demonstrated experimentally, using PbTe films deposited on mica. These charged states could not be observed earlier and be studied directly, because of the screening by the relatively high carrier density of the ordinary PbTe. Thin, Debye length thickness, PbTe films with a high concentration of interface trapping centers, possess an extraordinary high resistance. In this case the thermostimulated capacitor discharge method can be successfully applied to determine the energy of these levels, their carrier capture cross-sections and their donor- or acceptor-like character. The experimental results and theoretical calculations are discussed.

KW - Debye length thickness film

KW - Electric field effect

KW - Interface traps

KW - PbTe

KW - Relaxation

UR - https://www.scopus.com/pages/publications/33744531604

U2 - 10.1016/j.apsusc.2005.07.039

DO - 10.1016/j.apsusc.2005.07.039

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:33744531604

SN - 0169-4332

VL - 252

SP - 5793

EP - 5802

JO - Applied Surface Science

JF - Applied Surface Science

IS - 16

ER -

Effect of interface traps on Debye thickness semiconductor films

Abstract

Bibliographical note

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this