Abstract
The atomically thin sheets of Sb2Se3 hold a great potential in semiconductor applications. The present work reports intercalant-assisted exfoliation methods using various types of intercalants for the preparation of Sb2Se3 thin layers. Bulk Sb2Se3 was intercalated with H2O, PVP, Na+ and Li+ and thereby exfoliated ultrasonically. The structural analysis indicated the absence of certain planes in exfoliated samples, whereas the Raman analysis illustrated a distinct layer-dependent Raman shifts of vibrational modes. The bulk and exfoliated samples, when exposed electrochemically to H+ and K+ ions exhibited unique redox activity, which was correlated to the thickness of the exfoliated layers. The intercalating ability of intercalants was compared to the degree of exfoliation and found to be highest for ionic intercalants.
Original language | English |
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Article number | 137089 |
Journal | Materials Letters |
Volume | 372 |
DOIs | |
State | Published - 1 Oct 2024 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2024 Elsevier B.V.
Keywords
- Exfoliation
- Intercalation
- Oxidation
- Raman
- Semiconductors
- Thin layer sheets