Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers

Sushrut Modak; Leonid Chernyak; Sergey Khodorov; Igor Lubomirsky; Arie Ruzin; Minghan Xian; Fan Ren; Stephen J. Pearton

doi:10.1149/2162-8777/ab902b

Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga₂O₃ Schottky Rectifiers

Sushrut Modak
, Leonid Chernyak
, Sergey Khodorov
, Igor Lubomirsky
, Arie Ruzin
, Minghan Xian
, Fan Ren
, Stephen J. Pearton

Department of Physics
University of Central Florida
Department of Materials and Interfaces
Weizmann Institute of Science
Department of Electrical Engineering
Tel Aviv University
University of Florida

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼10¹⁴ cm^-2) Si-doped β-Ga₂O₃ Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga₂O₃ Schottky rectifiers is presented.

Original language	English
Article number	045018
Journal	ECS Journal of Solid State Science and Technology
Volume	9
Issue number	4
DOIs	https://doi.org/10.1149/2162-8777/ab902b
State	Published - 5 Jan 2020
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.

Funding

Funders	Funder number
National Science Foundation	1802208

Access to Document

10.1149/2162-8777/ab902b

Cite this

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title = "Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers",

abstract = "We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm-2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.",

author = "Sushrut Modak and Leonid Chernyak and Sergey Khodorov and Igor Lubomirsky and Arie Ruzin and Minghan Xian and Fan Ren and Pearton, \{Stephen J.\}",

note = "Publisher Copyright: {\textcopyright} 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.",

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T1 - Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers

AU - Modak, Sushrut

AU - Chernyak, Leonid

AU - Khodorov, Sergey

AU - Lubomirsky, Igor

AU - Ruzin, Arie

AU - Xian, Minghan

AU - Ren, Fan

AU - Pearton, Stephen J.

PY - 2020/1/5

Y1 - 2020/1/5

N2 - We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm-2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.

AB - We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm-2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.

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