The influence of the traps on the carrier transport has been investigated in two and three terminal devices using current-voltage and capacitance based spectroscopic methods. The electrical characteristics of organic thin film transistors fabricated on thin films with and without deep traps are compared. Vast improvement in the different parameters which define the performance of organic thin film transistors is observed in devices fabricated on thin films without structural disorder induced deep traps.
Bibliographical noteFunding Information:
PK and AS thank CSIR India, for the financial support through fellowship. This work was partly supported by Department of Science and Technology, Government of India. The authors gratefully acknowledge the experimental facilities provided by AIRF Jawaharlal Nehru University.