Effect of CVD temperature on orientation, roughness, and chemical mechanical polish removal rate of W thin films

R. K. Maynard; S. J. Pearton; R. K. Singh

doi:10.1149/1.1518991

Effect of CVD temperature on orientation, roughness, and chemical mechanical polish removal rate of W thin films

R. K. Maynard, S. J. Pearton, R. K. Singh

University of Florida

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The deposition temperature for tungsten films used as interconnects on Si integrated circuits is found to strongly influence the subsequent chemical mechanical polishing (CMP) removal rate. Careful analysis of the films by orientation imaging microscopy showed a direct correlation between the chemical vapor deposition temperature and the area fraction of (114) vs. (110) oriented tungsten grains. The CMP removal rate decreased as the fraction of (114) oriented grains in the film increased.

Original language	English
Pages (from-to)	G648-G650
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	12
DOIs	https://doi.org/10.1149/1.1518991
State	Published - Dec 2002
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1518991

Cite this

@article{0f23da47ddc14d268c246e853c8a7835,

title = "Effect of CVD temperature on orientation, roughness, and chemical mechanical polish removal rate of W thin films",

abstract = "The deposition temperature for tungsten films used as interconnects on Si integrated circuits is found to strongly influence the subsequent chemical mechanical polishing (CMP) removal rate. Careful analysis of the films by orientation imaging microscopy showed a direct correlation between the chemical vapor deposition temperature and the area fraction of (114) vs. (110) oriented tungsten grains. The CMP removal rate decreased as the fraction of (114) oriented grains in the film increased.",

author = "Maynard, {R. K.} and Pearton, {S. J.} and Singh, {R. K.}",

year = "2002",

month = dec,

doi = "10.1149/1.1518991",

language = "אנגלית",

volume = "149",

pages = "G648--G650",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Effect of CVD temperature on orientation, roughness, and chemical mechanical polish removal rate of W thin films

AU - Maynard, R. K.

AU - Pearton, S. J.

AU - Singh, R. K.

PY - 2002/12

Y1 - 2002/12

N2 - The deposition temperature for tungsten films used as interconnects on Si integrated circuits is found to strongly influence the subsequent chemical mechanical polishing (CMP) removal rate. Careful analysis of the films by orientation imaging microscopy showed a direct correlation between the chemical vapor deposition temperature and the area fraction of (114) vs. (110) oriented tungsten grains. The CMP removal rate decreased as the fraction of (114) oriented grains in the film increased.

AB - The deposition temperature for tungsten films used as interconnects on Si integrated circuits is found to strongly influence the subsequent chemical mechanical polishing (CMP) removal rate. Careful analysis of the films by orientation imaging microscopy showed a direct correlation between the chemical vapor deposition temperature and the area fraction of (114) vs. (110) oriented tungsten grains. The CMP removal rate decreased as the fraction of (114) oriented grains in the film increased.

UR - http://www.scopus.com/inward/record.url?scp=0036961582&partnerID=8YFLogxK

U2 - 10.1149/1.1518991

DO - 10.1149/1.1518991

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0036961582

SN - 0013-4651

VL - 149

SP - G648-G650

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 12

ER -

Effect of CVD temperature on orientation, roughness, and chemical mechanical polish removal rate of W thin films

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this