Effect of CVD temperature on orientation, roughness, and chemical mechanical polish removal rate of W thin films

R. K. Maynard, S. J. Pearton, R. K. Singh

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The deposition temperature for tungsten films used as interconnects on Si integrated circuits is found to strongly influence the subsequent chemical mechanical polishing (CMP) removal rate. Careful analysis of the films by orientation imaging microscopy showed a direct correlation between the chemical vapor deposition temperature and the area fraction of (114) vs. (110) oriented tungsten grains. The CMP removal rate decreased as the fraction of (114) oriented grains in the film increased.

Original languageEnglish
Pages (from-to)G648-G650
JournalJournal of the Electrochemical Society
Volume149
Issue number12
DOIs
StatePublished - Dec 2002
Externally publishedYes

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