Effect of conductive filament temperature on ZrO2 based resistive random access memory devices

Pramod J. Patil; Namita A. Ahir; Suhas Yadav; Chetan C. Revadekar; Kishorkumar V. Khot; Rajanish K. Kamat; Tukaram D. Dongale; Deok Kee Kim

doi:10.21272/jnep.12(2).02008

Effect of conductive filament temperature on ZrO₂ based resistive random access memory devices

Pramod J. Patil, Namita A. Ahir, Suhas Yadav, Chetan C. Revadekar, Kishorkumar V. Khot, Rajanish K. Kamat, Tukaram D. Dongale, Deok Kee Kim

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In the present work, the effect of reset voltage, filament radius, filament resistivity, and oxide membrane thickness on the nanoscale ZrO₂ RRAM devices was reported. The present investigation is based on the thermal reaction model of RRAM. The outcomes show a decline in saturated temperature with a rise in the radius and resistivity of filament. Furthermore, increases in saturated temperature with an increase in oxide membrane thickness were observed for the ZrO₂ based RRAM device. The saturated temperature of the device was mainly influenced by reset voltage, oxide layer thickness, filament size, and filament resistivity. The simulation results of the present investigation can be beneficial for the optimization of RRAM devices.

Original language	English
Article number	02008
Journal	Journal of Nano- and Electronic Physics
Volume	12
Issue number	2
DOIs	https://doi.org/10.21272/jnep.12(2).02008
State	Published - 2020
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2020 Sumy State University.

Keywords

Resistive memory
Simulation
Thermal reaction model
ZrO

Access to Document

10.21272/jnep.12(2).02008

Cite this

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title = "Effect of conductive filament temperature on ZrO2 based resistive random access memory devices",

abstract = "In the present work, the effect of reset voltage, filament radius, filament resistivity, and oxide membrane thickness on the nanoscale ZrO2 RRAM devices was reported. The present investigation is based on the thermal reaction model of RRAM. The outcomes show a decline in saturated temperature with a rise in the radius and resistivity of filament. Furthermore, increases in saturated temperature with an increase in oxide membrane thickness were observed for the ZrO2 based RRAM device. The saturated temperature of the device was mainly influenced by reset voltage, oxide layer thickness, filament size, and filament resistivity. The simulation results of the present investigation can be beneficial for the optimization of RRAM devices.",

keywords = "Resistive memory, Simulation, Thermal reaction model, ZrO",

author = "Patil, {Pramod J.} and Ahir, {Namita A.} and Suhas Yadav and Revadekar, {Chetan C.} and Khot, {Kishorkumar V.} and Kamat, {Rajanish K.} and Dongale, {Tukaram D.} and Kim, {Deok Kee}",

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year = "2020",

doi = "10.21272/jnep.12(2).02008",

language = "אנגלית",

volume = "12",

journal = "Journal of Nano- and Electronic Physics",

issn = "2077-6772",

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TY - JOUR

T1 - Effect of conductive filament temperature on ZrO2 based resistive random access memory devices

AU - Patil, Pramod J.

AU - Ahir, Namita A.

AU - Yadav, Suhas

AU - Revadekar, Chetan C.

AU - Khot, Kishorkumar V.

AU - Kamat, Rajanish K.

AU - Dongale, Tukaram D.

AU - Kim, Deok Kee

PY - 2020

Y1 - 2020

N2 - In the present work, the effect of reset voltage, filament radius, filament resistivity, and oxide membrane thickness on the nanoscale ZrO2 RRAM devices was reported. The present investigation is based on the thermal reaction model of RRAM. The outcomes show a decline in saturated temperature with a rise in the radius and resistivity of filament. Furthermore, increases in saturated temperature with an increase in oxide membrane thickness were observed for the ZrO2 based RRAM device. The saturated temperature of the device was mainly influenced by reset voltage, oxide layer thickness, filament size, and filament resistivity. The simulation results of the present investigation can be beneficial for the optimization of RRAM devices.

AB - In the present work, the effect of reset voltage, filament radius, filament resistivity, and oxide membrane thickness on the nanoscale ZrO2 RRAM devices was reported. The present investigation is based on the thermal reaction model of RRAM. The outcomes show a decline in saturated temperature with a rise in the radius and resistivity of filament. Furthermore, increases in saturated temperature with an increase in oxide membrane thickness were observed for the ZrO2 based RRAM device. The saturated temperature of the device was mainly influenced by reset voltage, oxide layer thickness, filament size, and filament resistivity. The simulation results of the present investigation can be beneficial for the optimization of RRAM devices.

KW - Resistive memory

KW - Simulation

KW - Thermal reaction model

KW - ZrO

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