EFFECT OF COMPOSITION FLUCTUATIONS IN Ge-Si SOLID SOLUTIONS.

I. S. Shlimak, A. L. Efros, I. Ya Yanchev

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Abstract

A theoretical study is made of the effect of fluctuations of the composition of Ge//1// minus //xSi//x solid solutions on the hole mobility. The measurements of the temperature dependence of the mobility are quoted for a series of p-type Ge//1// minus //xSi//x samples (0. 004 less than equivalent to x less than equivalent to 0. 08) with identical impurity compositions. A comparison of the experimental and calculated results indicates that Si is contained in Ge in the form of clusters of K atoms rather than single atoms, where K equals 30-150. This conclusion is consistent with the data on the hopping conductivity of such samples.

Original languageEnglish
Pages (from-to)149-151
Number of pages3
JournalSemiconductors
Volume11
Issue number2
StatePublished - 1977

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