Effect of As doping on the photoluminescence of nanocrystalline 74Ge embedded in SiO2 matrix

Shaobo Dun; Tiecheng Lu; Youwen Hu; Qiang Hu; Liuqi Yu; Zheng Li; Ningkang Huang; Songbao Zhang; Bin Tang; Junlong Dai; Lev Resnick; Issai Shlimak

doi:10.1016/j.jlumin.2008.01.005

Effect of As doping on the photoluminescence of nanocrystalline ⁷⁴Ge embedded in SiO₂ matrix

Shaobo Dun, Tiecheng Lu, Youwen Hu, Qiang Hu, Liuqi Yu, Zheng Li, Ningkang Huang, Songbao Zhang, Bin Tang, Junlong Dai, Lev Resnick, Issai Shlimak

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Samples of nanocrystalline ⁷⁴Ge embedded in amorphous SiO₂ film were prepared by ⁷⁴Ge ion implantation and subsequent primary thermal annealing. These samples were irradiated by neutron flux in a nuclear reactor then the second annealing followed. Irradiation with thermal neutrons leads to doping of nanocrystalline ⁷⁴Ge with As impurities due to nuclear transmutation of isotope ⁷⁴Ge into ⁷⁵As. Transmission electron microscope, X-ray fluorescence, X-ray photoelectron spectroscopy, laser Raman scattering and photoluminescence of the obtained samples were measured. It was observed that with the increase in As-donors concentration, photoluminescence intensity first increased but then significantly decreased. An explanatory model of this non-monotonic behavior was discussed.

Original language	English
Pages (from-to)	1363-1368
Number of pages	6
Journal	Journal of Luminescence
Volume	128
Issue number	8
DOIs	https://doi.org/10.1016/j.jlumin.2008.01.005
State	Published - Aug 2008
Externally published	Yes

Bibliographical note

Funding Information:
This research was supported by a Grant #3-405 from the Ministry of Science and Technology, Israel, within the Cooperation Program with the Ministry of Science and Technology, China and NASF of NSFC-CAEP of China (no. 10376020), as well as Program for New Century Excellent Talents in University, China (no. NCET-04-0874). The authors thank A.N. Ionov and I. Lazebnik for their help in sample irradiation with a neutron flux in a research nuclear reactor; also thank Kai Sun and Lumin Wang for their help in XPS and TEM measurements and results discussion. L.R. and I.S. are thankful to the Erick and Sheila Samson Chair of Semiconductor Technology for the financial support.

Funding

This research was supported by a Grant #3-405 from the Ministry of Science and Technology, Israel, within the Cooperation Program with the Ministry of Science and Technology, China and NASF of NSFC-CAEP of China (no. 10376020), as well as Program for New Century Excellent Talents in University, China (no. NCET-04-0874). The authors thank A.N. Ionov and I. Lazebnik for their help in sample irradiation with a neutron flux in a research nuclear reactor; also thank Kai Sun and Lumin Wang for their help in XPS and TEM measurements and results discussion. L.R. and I.S. are thankful to the Erick and Sheila Samson Chair of Semiconductor Technology for the financial support.

Funders	Funder number
NASF
NSFC-CAEP of China	10376020
Ministry of Science and Technology of the People's Republic of China
Program for New Century Excellent Talents in University	NCET-04-0874
Ministry of science and technology, Israel

Keywords

Doping
Nanocrystals
Photoluminescence
Quenching

Access to Document

10.1016/j.jlumin.2008.01.005

Cite this

@article{b08fe91f70e84462844603fe759c0796,

title = "Effect of As doping on the photoluminescence of nanocrystalline 74Ge embedded in SiO2 matrix",

abstract = "Samples of nanocrystalline 74Ge embedded in amorphous SiO2 film were prepared by 74Ge ion implantation and subsequent primary thermal annealing. These samples were irradiated by neutron flux in a nuclear reactor then the second annealing followed. Irradiation with thermal neutrons leads to doping of nanocrystalline 74Ge with As impurities due to nuclear transmutation of isotope 74Ge into 75As. Transmission electron microscope, X-ray fluorescence, X-ray photoelectron spectroscopy, laser Raman scattering and photoluminescence of the obtained samples were measured. It was observed that with the increase in As-donors concentration, photoluminescence intensity first increased but then significantly decreased. An explanatory model of this non-monotonic behavior was discussed.",

keywords = "Doping, Nanocrystals, Photoluminescence, Quenching",

author = "Shaobo Dun and Tiecheng Lu and Youwen Hu and Qiang Hu and Liuqi Yu and Zheng Li and Ningkang Huang and Songbao Zhang and Bin Tang and Junlong Dai and Lev Resnick and Issai Shlimak",

note = "Funding Information: This research was supported by a Grant #3-405 from the Ministry of Science and Technology, Israel, within the Cooperation Program with the Ministry of Science and Technology, China and NASF of NSFC-CAEP of China (no. 10376020), as well as Program for New Century Excellent Talents in University, China (no. NCET-04-0874). The authors thank A.N. Ionov and I. Lazebnik for their help in sample irradiation with a neutron flux in a research nuclear reactor; also thank Kai Sun and Lumin Wang for their help in XPS and TEM measurements and results discussion. L.R. and I.S. are thankful to the Erick and Sheila Samson Chair of Semiconductor Technology for the financial support.",

year = "2008",

month = aug,

doi = "10.1016/j.jlumin.2008.01.005",

language = "אנגלית",

volume = "128",

pages = "1363--1368",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

number = "8",

}

TY - JOUR

T1 - Effect of As doping on the photoluminescence of nanocrystalline 74Ge embedded in SiO2 matrix

AU - Dun, Shaobo

AU - Lu, Tiecheng

AU - Hu, Youwen

AU - Hu, Qiang

AU - Yu, Liuqi

AU - Li, Zheng

AU - Huang, Ningkang

AU - Zhang, Songbao

AU - Tang, Bin

AU - Dai, Junlong

AU - Resnick, Lev

AU - Shlimak, Issai

N1 - Funding Information: This research was supported by a Grant #3-405 from the Ministry of Science and Technology, Israel, within the Cooperation Program with the Ministry of Science and Technology, China and NASF of NSFC-CAEP of China (no. 10376020), as well as Program for New Century Excellent Talents in University, China (no. NCET-04-0874). The authors thank A.N. Ionov and I. Lazebnik for their help in sample irradiation with a neutron flux in a research nuclear reactor; also thank Kai Sun and Lumin Wang for their help in XPS and TEM measurements and results discussion. L.R. and I.S. are thankful to the Erick and Sheila Samson Chair of Semiconductor Technology for the financial support.

PY - 2008/8

Y1 - 2008/8

N2 - Samples of nanocrystalline 74Ge embedded in amorphous SiO2 film were prepared by 74Ge ion implantation and subsequent primary thermal annealing. These samples were irradiated by neutron flux in a nuclear reactor then the second annealing followed. Irradiation with thermal neutrons leads to doping of nanocrystalline 74Ge with As impurities due to nuclear transmutation of isotope 74Ge into 75As. Transmission electron microscope, X-ray fluorescence, X-ray photoelectron spectroscopy, laser Raman scattering and photoluminescence of the obtained samples were measured. It was observed that with the increase in As-donors concentration, photoluminescence intensity first increased but then significantly decreased. An explanatory model of this non-monotonic behavior was discussed.

AB - Samples of nanocrystalline 74Ge embedded in amorphous SiO2 film were prepared by 74Ge ion implantation and subsequent primary thermal annealing. These samples were irradiated by neutron flux in a nuclear reactor then the second annealing followed. Irradiation with thermal neutrons leads to doping of nanocrystalline 74Ge with As impurities due to nuclear transmutation of isotope 74Ge into 75As. Transmission electron microscope, X-ray fluorescence, X-ray photoelectron spectroscopy, laser Raman scattering and photoluminescence of the obtained samples were measured. It was observed that with the increase in As-donors concentration, photoluminescence intensity first increased but then significantly decreased. An explanatory model of this non-monotonic behavior was discussed.

KW - Doping

KW - Nanocrystals

KW - Photoluminescence

KW - Quenching

UR - http://www.scopus.com/inward/record.url?scp=43049178385&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2008.01.005

DO - 10.1016/j.jlumin.2008.01.005

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:43049178385

SN - 0022-2313

VL - 128

SP - 1363

EP - 1368

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 8

ER -