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Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors
A. Yadav, C. Schwarz, M. Shatkhin, L. Wang, E. Flitsiyan, L. Chernyak, L. Lu, Y. H. Hwang, F. Ren, S. J. Pearton, I. Lubomirsky
Research output: Contribution to journal › Conference article › peer-review
4
Scopus
citations