Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors

A. Yadav; C. Schwarz; M. Shatkhin; L. Wang; E. Flitsiyan; L. Chernyak; L. Lu; Y. H. Hwang; F. Ren; S. J. Pearton; I. Lubomirsky

doi:10.1149/06104.0171ecst

Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors

A. Yadav, C. Schwarz, M. Shatkhin, L. Wang, E. Flitsiyan, L. Chernyak, L. Lu, Y. H. Hwang, F. Ren, S. J. Pearton, I. Lubomirsky

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

AlGaN/GaN High Electron Mobility Transistors were irradiated with ⁶⁰Co gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200° C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.

Original language	English
Pages (from-to)	171-177
Number of pages	7
Journal	ECS Transactions
Volume	61
Issue number	4
DOIs	https://doi.org/10.1149/06104.0171ecst
State	Published - 2014
Externally published	Yes
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States Duration: 11 May 2014 → 15 May 2014

Bibliographical note

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© 2014 by The Electrochemical Society. All rights reserved.

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10.1149/06104.0171ecst

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title = "Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors",

abstract = "AlGaN/GaN High Electron Mobility Transistors were irradiated with 60Co gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200° C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.",

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note = "Publisher Copyright: {\textcopyright} 2014 by The Electrochemical Society. All rights reserved.; Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

year = "2014",

doi = "10.1149/06104.0171ecst",

language = "אנגלית",

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TY - JOUR

T1 - Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors

AU - Yadav, A.

AU - Schwarz, C.

AU - Shatkhin, M.

AU - Wang, L.

AU - Flitsiyan, E.

AU - Chernyak, L.

AU - Lu, L.

AU - Hwang, Y. H.

AU - Ren, F.

AU - Pearton, S. J.

AU - Lubomirsky, I.

PY - 2014

Y1 - 2014

N2 - AlGaN/GaN High Electron Mobility Transistors were irradiated with 60Co gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200° C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.

AB - AlGaN/GaN High Electron Mobility Transistors were irradiated with 60Co gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200° C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.

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SN - 1938-5862

VL - 61

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JO - ECS Transactions

JF - ECS Transactions

IS - 4

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting

Y2 - 11 May 2014 through 15 May 2014

ER -

Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors

Abstract

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