Abstract
It is shown that the anisotropy of electron-dislocation scattering leads to a sample dependence for the electron-electron scattering contribution to the electrical resistivity. Including this anisotropy accounts quantitatively for the marked sample dependence recently observed for the low-temperature electrical resistivity of potassium.
| Original language | English |
|---|---|
| Article number | 007 |
| Pages (from-to) | L37-L42 |
| Journal | Journal of Physics F: Metal Physics |
| Volume | 10 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1980 |