Abstract
The effect of air annealing on state-of-the-art, solar-cell-quality CdS/Cu(In,Ga)Se2 heterojunctions has been studied using contact potential difference and surface photovoltage measurements. The annealing treatment is shown to have no significant effect on the band lineup of the heterojunction. However, the surface photovoltage spectral response increases markedly upon air annealing. These results can be reconciled if air annealing of the junctions leads mainly to elimination of recombination centers, rather than to changes in the built-in voltage or in the band lineup. We also show that ZnO deposition has an effect on the surface photovoltage that is similar to that of air annealing.
| Original language | English |
|---|---|
| Pages (from-to) | 73-78 |
| Number of pages | 6 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 43 |
| Issue number | 1 |
| DOIs | |
| State | Published - 15 Aug 1996 |
| Externally published | Yes |
Funding
This research was supported by a grant from the Israeli-German program of energy research through the Forschungszentrum Jiilich (KFA), and the Israeli Ministry of Science and the Arts.
| Funders |
|---|
| Israeli Ministry of Science and the Arts |
| Israeli-German program of energy research |
| Kimberley Foundation Australia |
| Forschungszentrum Jülich |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Band diagram
- Band line-up
- CdS
- Cu(In,Ga)Se
- CuInSe
- Efficiency
- Heterojunction
- Optimization
- Polycrystalline
- Thin film
- ZnO
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