EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Leonid Chernyak, Seth Lovo, Jian Sian Li, Chao Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Alfons Schulte, Arie Ruzin, Ulyana Shimanovich

Research output: Contribution to journalArticlepeer-review

Abstract

Minority carrier diffusion length in undoped p-type gallium oxide was measured at various temperatures as a function of electron beam charge injection by electron beam-induced current technique in situ using a scanning electron microscope. The results demonstrate that charge injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) on metastable native defect levels in the material, which in turn blocks recombination through these levels. While previous studies of the same material were focused on probing a non-equilibrium carrier recombination by purely optical means (cathodoluminescence), in this work, the impact of charge injection on minority carrier diffusion was investigated. The activation energy of ∼0.072 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.

Original languageEnglish
Article number115301
JournalAIP Advances
Volume14
Issue number11
DOIs
StatePublished - 1 Nov 2024
Externally publishedYes

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