Abstract
Minority carrier diffusion length in undoped p-type gallium oxide was measured at various temperatures as a function of electron beam charge injection by electron beam-induced current technique in situ using a scanning electron microscope. The results demonstrate that charge injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) on metastable native defect levels in the material, which in turn blocks recombination through these levels. While previous studies of the same material were focused on probing a non-equilibrium carrier recombination by purely optical means (cathodoluminescence), in this work, the impact of charge injection on minority carrier diffusion was investigated. The activation energy of ∼0.072 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.
Original language | English |
---|---|
Article number | 115301 |
Journal | AIP Advances |
Volume | 14 |
Issue number | 11 |
DOIs | |
State | Published - 1 Nov 2024 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2024 Author(s).