e-Beam electroreflectance of short-period SiGe superlattices

M. A. Gell; M. H. Herman; I. D. Ward; C. J. Gibbings; M. E. Jones; C. G. Toppen; A. C. Churchill; P. C. Klipstein

doi:10.1016/0042-207x(90)93830-c

e-Beam electroreflectance of short-period SiGe superlattices

M. A. Gell, M. H. Herman, I. D. Ward, C. J. Gibbings, M. E. Jones, C. G. Toppen, A. C. Churchill, P. C. Klipstein

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Electron-beam electroreflectance (EBER) has been used to investigate electronic and optical properties of short-period SiGe superlattices grown by molecular beam epitaxy on (001)Si. The advantage of the EBER method over conventional ER techniques is that no contact has to be made to the sample. The results are compared with those obtained from conventional Schottky barrier electroreflectance (SBER) measurements performed on samples taken from the same wafer. The two ER techniques give results which are in good agreement. The EBER and SBER experimental results on these SiGe superlattice samples closely match theoretically predicted transitions obtained from full-scale empirical pseudopotential calculations.

Original language	English
Pages (from-to)	947-950
Number of pages	4
Journal	Vacuum
Volume	41
Issue number	4-6
DOIs	https://doi.org/10.1016/0042-207x(90)93830-c
State	Published - 1990
Externally published	Yes

Bibliographical note

Funding Information:
The authors would like to thank M Hockly, P J Skevington and W M Stobbs for analytical support, D A Reed and B H Newcombe for assistance in taking the EBER spectra and B J Hall for performing Ar sputter etching of the samples for the preparation of comparative samples. One of us (ACC) wishes to acknowledge the Science and Engineering Research Council (United Kingdom) and British Telecommunications plc for financial support. The development of the EBER technique was supported in part by the US Army and Defence Advanced Research Projects Agency under contract DAAH01-88-C-0873.

Funding

The authors would like to thank M Hockly, P J Skevington and W M Stobbs for analytical support, D A Reed and B H Newcombe for assistance in taking the EBER spectra and B J Hall for performing Ar sputter etching of the samples for the preparation of comparative samples. One of us (ACC) wishes to acknowledge the Science and Engineering Research Council (United Kingdom) and British Telecommunications plc for financial support. The development of the EBER technique was supported in part by the US Army and Defence Advanced Research Projects Agency under contract DAAH01-88-C-0873.

Funders	Funder number
British Telecommunications plc
US Army and Defence Advanced Research Projects Agency	DAAH01-88-C-0873
Science and Engineering Research Council

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@article{303174c588204ccc99e2309c3be3d422,

title = "e-Beam electroreflectance of short-period SiGe superlattices",

abstract = "Electron-beam electroreflectance (EBER) has been used to investigate electronic and optical properties of short-period SiGe superlattices grown by molecular beam epitaxy on (001)Si. The advantage of the EBER method over conventional ER techniques is that no contact has to be made to the sample. The results are compared with those obtained from conventional Schottky barrier electroreflectance (SBER) measurements performed on samples taken from the same wafer. The two ER techniques give results which are in good agreement. The EBER and SBER experimental results on these SiGe superlattice samples closely match theoretically predicted transitions obtained from full-scale empirical pseudopotential calculations.",

author = "Gell, {M. A.} and Herman, {M. H.} and Ward, {I. D.} and Gibbings, {C. J.} and Jones, {M. E.} and Toppen, {C. G.} and Churchill, {A. C.} and Klipstein, {P. C.}",

note = "Funding Information: The authors would like to thank M Hockly, P J Skevington and W M Stobbs for analytical support, D A Reed and B H Newcombe for assistance in taking the EBER spectra and B J Hall for performing Ar sputter etching of the samples for the preparation of comparative samples. One of us (ACC) wishes to acknowledge the Science and Engineering Research Council (United Kingdom) and British Telecommunications plc for financial support. The development of the EBER technique was supported in part by the US Army and Defence Advanced Research Projects Agency under contract DAAH01-88-C-0873.",

year = "1990",

doi = "10.1016/0042-207x(90)93830-c",

language = "אנגלית",

volume = "41",

pages = "947--950",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd.",

number = "4-6",

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T1 - e-Beam electroreflectance of short-period SiGe superlattices

AU - Gell, M. A.

AU - Herman, M. H.

AU - Ward, I. D.

AU - Gibbings, C. J.

AU - Jones, M. E.

AU - Toppen, C. G.

AU - Churchill, A. C.

AU - Klipstein, P. C.

N1 - Funding Information: The authors would like to thank M Hockly, P J Skevington and W M Stobbs for analytical support, D A Reed and B H Newcombe for assistance in taking the EBER spectra and B J Hall for performing Ar sputter etching of the samples for the preparation of comparative samples. One of us (ACC) wishes to acknowledge the Science and Engineering Research Council (United Kingdom) and British Telecommunications plc for financial support. The development of the EBER technique was supported in part by the US Army and Defence Advanced Research Projects Agency under contract DAAH01-88-C-0873.

PY - 1990

Y1 - 1990

N2 - Electron-beam electroreflectance (EBER) has been used to investigate electronic and optical properties of short-period SiGe superlattices grown by molecular beam epitaxy on (001)Si. The advantage of the EBER method over conventional ER techniques is that no contact has to be made to the sample. The results are compared with those obtained from conventional Schottky barrier electroreflectance (SBER) measurements performed on samples taken from the same wafer. The two ER techniques give results which are in good agreement. The EBER and SBER experimental results on these SiGe superlattice samples closely match theoretically predicted transitions obtained from full-scale empirical pseudopotential calculations.

AB - Electron-beam electroreflectance (EBER) has been used to investigate electronic and optical properties of short-period SiGe superlattices grown by molecular beam epitaxy on (001)Si. The advantage of the EBER method over conventional ER techniques is that no contact has to be made to the sample. The results are compared with those obtained from conventional Schottky barrier electroreflectance (SBER) measurements performed on samples taken from the same wafer. The two ER techniques give results which are in good agreement. The EBER and SBER experimental results on these SiGe superlattice samples closely match theoretically predicted transitions obtained from full-scale empirical pseudopotential calculations.

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ER -

e-Beam electroreflectance of short-period SiGe superlattices

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