Dynamic growth effects during low-pressure deposition of diamond films

Donald R. Gilbert; Rajiv Singh; Roy Clarke; S. Murugkar

doi:10.1063/1.118796

Dynamic growth effects during low-pressure deposition of diamond films

Donald R. Gilbert, Rajiv Singh, Roy Clarke, S. Murugkar

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Diamond films were deposited in a modified electron-cyclotron-resonance plasma system operating at pressures between 1.0 and 2.0 Torr. This system provides the advantage of efficient plasma generation due to magnetic enhancement and high diffusion rates due to relatively low-pressure operation. Films were formed from preexisting seed layers providing high "nucleation" densities to promote rapid coalescence. Raman analysis of grown films showed a quality dependence on both deposition pressure and nucleation density. We speculate that the increased presence of amorphous carbon and larger film stresses is the result of grain-boundary impurity effects in the seeded films. Oxygen addition improved film quality by reducing nondiamond carbon incorporation.

Original language	English
Pages (from-to)	1974-1976
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	15
DOIs	https://doi.org/10.1063/1.118796
State	Published - 14 Apr 1997
Externally published	Yes

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10.1063/1.118796

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@article{1fb9ab396c7b47189201b95ac1c49731,

title = "Dynamic growth effects during low-pressure deposition of diamond films",

abstract = "Diamond films were deposited in a modified electron-cyclotron-resonance plasma system operating at pressures between 1.0 and 2.0 Torr. This system provides the advantage of efficient plasma generation due to magnetic enhancement and high diffusion rates due to relatively low-pressure operation. Films were formed from preexisting seed layers providing high {"}nucleation{"} densities to promote rapid coalescence. Raman analysis of grown films showed a quality dependence on both deposition pressure and nucleation density. We speculate that the increased presence of amorphous carbon and larger film stresses is the result of grain-boundary impurity effects in the seeded films. Oxygen addition improved film quality by reducing nondiamond carbon incorporation.",

author = "Gilbert, \{Donald R.\} and Rajiv Singh and Roy Clarke and S. Murugkar",

year = "1997",

month = apr,

day = "14",

doi = "10.1063/1.118796",

language = "אנגלית",

volume = "70",

pages = "1974--1976",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Dynamic growth effects during low-pressure deposition of diamond films

AU - Gilbert, Donald R.

AU - Singh, Rajiv

AU - Clarke, Roy

AU - Murugkar, S.

PY - 1997/4/14

Y1 - 1997/4/14

N2 - Diamond films were deposited in a modified electron-cyclotron-resonance plasma system operating at pressures between 1.0 and 2.0 Torr. This system provides the advantage of efficient plasma generation due to magnetic enhancement and high diffusion rates due to relatively low-pressure operation. Films were formed from preexisting seed layers providing high "nucleation" densities to promote rapid coalescence. Raman analysis of grown films showed a quality dependence on both deposition pressure and nucleation density. We speculate that the increased presence of amorphous carbon and larger film stresses is the result of grain-boundary impurity effects in the seeded films. Oxygen addition improved film quality by reducing nondiamond carbon incorporation.

AB - Diamond films were deposited in a modified electron-cyclotron-resonance plasma system operating at pressures between 1.0 and 2.0 Torr. This system provides the advantage of efficient plasma generation due to magnetic enhancement and high diffusion rates due to relatively low-pressure operation. Films were formed from preexisting seed layers providing high "nucleation" densities to promote rapid coalescence. Raman analysis of grown films showed a quality dependence on both deposition pressure and nucleation density. We speculate that the increased presence of amorphous carbon and larger film stresses is the result of grain-boundary impurity effects in the seeded films. Oxygen addition improved film quality by reducing nondiamond carbon incorporation.

UR - https://www.scopus.com/pages/publications/0000561503

U2 - 10.1063/1.118796

DO - 10.1063/1.118796

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0000561503

SN - 0003-6951

VL - 70

SP - 1974

EP - 1976

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Dynamic growth effects during low-pressure deposition of diamond films

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