Dynamic growth effects during low-pressure deposition of diamond films

Donald R. Gilbert, Rajiv Singh, Roy Clarke, S. Murugkar

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Diamond films were deposited in a modified electron-cyclotron-resonance plasma system operating at pressures between 1.0 and 2.0 Torr. This system provides the advantage of efficient plasma generation due to magnetic enhancement and high diffusion rates due to relatively low-pressure operation. Films were formed from preexisting seed layers providing high "nucleation" densities to promote rapid coalescence. Raman analysis of grown films showed a quality dependence on both deposition pressure and nucleation density. We speculate that the increased presence of amorphous carbon and larger film stresses is the result of grain-boundary impurity effects in the seeded films. Oxygen addition improved film quality by reducing nondiamond carbon incorporation.

Original languageEnglish
Pages (from-to)1974-1976
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number15
DOIs
StatePublished - 14 Apr 1997
Externally publishedYes

Fingerprint

Dive into the research topics of 'Dynamic growth effects during low-pressure deposition of diamond films'. Together they form a unique fingerprint.

Cite this