Dynamic contact characteristics during chemical mechanical polishing (CMP)

Wonseop Choi, Seung Mahn Lee, Rajiv K. Singh

Research output: Contribution to journalConference articlepeer-review

Abstract

In chemical mechanical polishing (CMP), it is critical to understand dynamic contact at the pad-particles-wafer interface for desired CMP performance. The dynamic contact is dependent on process variables (platen velocity and down pressure) and particle characteristics (size and concentration), which in turn affect friction force. In this study, we have characterized the dynamic contact at the pad-particles-wafer interface as a function of platen velocity and down pressure. In situ lateral friction force measurements were carried out for silica slurry / sapphire wafer system in order to investigate the dynamic contact during polishing. As solids loading increases, the slope in the friction force vs. platen velocity curve changes from a negative to a positive value. Friction force increases with down pressure for different solids loading conditions. Consequently, friction force is determined as a function of down pressure and platen velocity, validating a dynamic contact mechanism during CMP.

Original languageEnglish
Pages (from-to)63-68
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume767
DOIs
StatePublished - 2003
Externally publishedYes
EventChemical-Mechanical Planarization - San Francisco, CA, United States
Duration: 22 Apr 200324 Apr 2003

Fingerprint

Dive into the research topics of 'Dynamic contact characteristics during chemical mechanical polishing (CMP)'. Together they form a unique fingerprint.

Cite this