Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks

Michael Bendayan, Roi Sabo, Roee Zolberg, Yaakov Mandelbaum, Avraham Chelly, Avi Karsenty

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.

Original languageEnglish
Title of host publicationPhotonic and Phononic Properties of Engineered Nanostructures VII
EditorsAxel Scherer, Shawn-Yu Lin, Ali Adibi
PublisherSPIE
ISBN (Electronic)9781510606654
DOIs
StatePublished - 2017
EventPhotonic and Phononic Properties of Engineered Nanostructures VII - San Francisco, United States
Duration: 30 Jan 20172 Feb 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10112
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferencePhotonic and Phononic Properties of Engineered Nanostructures VII
Country/TerritoryUnited States
CitySan Francisco
Period30/01/172/02/17

Bibliographical note

Publisher Copyright:
© 2017 SPIE.

Keywords

  • Optoelectronic effect
  • SOI MOSFET
  • light emission
  • quantum well
  • simulation

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