Abstract
We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.
Original language | English |
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Title of host publication | Photonic and Phononic Properties of Engineered Nanostructures VII |
Editors | Axel Scherer, Shawn-Yu Lin, Ali Adibi |
Publisher | SPIE |
ISBN (Electronic) | 9781510606654 |
DOIs | |
State | Published - 2017 |
Event | Photonic and Phononic Properties of Engineered Nanostructures VII - San Francisco, United States Duration: 30 Jan 2017 → 2 Feb 2017 |
Publication series
Name | Proceedings of SPIE - The International Society for Optical Engineering |
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Volume | 10112 |
ISSN (Print) | 0277-786X |
ISSN (Electronic) | 1996-756X |
Conference
Conference | Photonic and Phononic Properties of Engineered Nanostructures VII |
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Country/Territory | United States |
City | San Francisco |
Period | 30/01/17 → 2/02/17 |
Bibliographical note
Publisher Copyright:© 2017 SPIE.
Keywords
- Optoelectronic effect
- SOI MOSFET
- light emission
- quantum well
- simulation