Dual-Mode Low-Drop-Out Regulator/Power Gate With Linear and On-Off Conduction for Microprocessor Core On-Die Supply Voltages in 14 nm

Kosta Luria; Joseph Shor; Michael Zelikson; Alex Lyakhov

doi:10.1109/jssc.2015.2512387

Dual-Mode Low-Drop-Out Regulator/Power Gate With Linear and On-Off Conduction for Microprocessor Core On-Die Supply Voltages in 14 nm

Kosta Luria, Joseph Shor, Michael Zelikson, Alex Lyakhov

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Intel

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

A dual-mode digital power gate (PG) and linear low-drop-out regulator (LDO) has been demonstrated in 14 nm. A modified flipped source follower driver circuit is used to minimize dI/dt droops. The LDO has a novel compensation method which utilizes capacitance multiplication and can drive a 1-7 μF load without any external compensation elements. This LDO exhibits high-current drive capability (3 A) at low-dropout voltages (< 60 mV) and high-current efficiency (> 99%), making it suitable to drive a microprocessor core.

Original language	English
Article number	7383230
Pages (from-to)	752-762
Number of pages	11
Journal	IEEE Journal of Solid-State Circuits
Volume	51
Issue number	3
DOIs	https://doi.org/10.1109/jssc.2015.2512387
State	Published - Mar 2016

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Analog
low-drop-out regulator (LDO)
microprocessors
power management

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10.1109/jssc.2015.2512387

Cite this

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title = "Dual-Mode Low-Drop-Out Regulator/Power Gate With Linear and On-Off Conduction for Microprocessor Core On-Die Supply Voltages in 14 nm",

abstract = "A dual-mode digital power gate (PG) and linear low-drop-out regulator (LDO) has been demonstrated in 14 nm. A modified flipped source follower driver circuit is used to minimize dI/dt droops. The LDO has a novel compensation method which utilizes capacitance multiplication and can drive a 1-7 μF load without any external compensation elements. This LDO exhibits high-current drive capability (3 A) at low-dropout voltages (< 60 mV) and high-current efficiency (> 99%), making it suitable to drive a microprocessor core.",

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author = "Kosta Luria and Joseph Shor and Michael Zelikson and Alex Lyakhov",

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year = "2016",

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AU - Zelikson, Michael

AU - Lyakhov, Alex

PY - 2016/3

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AB - A dual-mode digital power gate (PG) and linear low-drop-out regulator (LDO) has been demonstrated in 14 nm. A modified flipped source follower driver circuit is used to minimize dI/dt droops. The LDO has a novel compensation method which utilizes capacitance multiplication and can drive a 1-7 μF load without any external compensation elements. This LDO exhibits high-current drive capability (3 A) at low-dropout voltages (< 60 mV) and high-current efficiency (> 99%), making it suitable to drive a microprocessor core.

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Dual-Mode Low-Drop-Out Regulator/Power Gate With Linear and On-Off Conduction for Microprocessor Core On-Die Supply Voltages in 14 nm

Abstract

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Keywords

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