Dry etching to form submicron features in CMR oxides: (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3

K. P. Lee; K. B. Jung; H. Cho; D. Kumar; S. V. Pietambaram; R. K. Singh; P. H. Hogan; K. H. Dahmen; Y. B. Hahn; S. J. Pearton

doi:10.1557/proc-574-341

Dry etching to form submicron features in CMR oxides: (Pr,Ba,Ca)MnO₃ and (La,Sr)MnO₃

K. P. Lee, K. B. Jung, H. Cho, D. Kumar, S. V. Pietambaram, R. K. Singh, P. H. Hogan, K. H. Dahmen, Y. B. Hahn, S. J. Pearton

Research output: Contribution to journal › Conference article › peer-review

Abstract

Effective pattern transfer into (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3 has been achieved using Cl2/Ar discharges operated under Inductively Coupled Plasma conditions. Etch rates up to 900 A-min"1 for (La,Sr)MnO3 and 300 A-min'1 for (Pr,Ba,Ca)MnOj were obtained, with these rates being a strong function of ion flux, ion energy and ion-to-neutral ratio. The etching is still physically-dominated under all conditions, leading to significant surface smoothing on initially rough samples. Sub-micron (0.35 Um) features have been produced in both materials using SiN, as the mask.

Original language	English
Pages (from-to)	341-346
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	574
DOIs	https://doi.org/10.1557/proc-574-341
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium BB: 'Multicomponent Oxide Films for Electronics' - San Francisco, CA, United States Duration: 6 Apr 1999 → 8 Apr 1999

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@article{7bda2b784f9249fc957943847c8670fe,

title = "Dry etching to form submicron features in CMR oxides: (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3",

abstract = "Effective pattern transfer into (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3 has been achieved using Cl2/Ar discharges operated under Inductively Coupled Plasma conditions. Etch rates up to 900 A-min{"}1 for (La,Sr)MnO3 and 300 A-min'1 for (Pr,Ba,Ca)MnOj were obtained, with these rates being a strong function of ion flux, ion energy and ion-to-neutral ratio. The etching is still physically-dominated under all conditions, leading to significant surface smoothing on initially rough samples. Sub-micron (0.35 Um) features have been produced in both materials using SiN, as the mask.",

author = "Lee, {K. P.} and Jung, {K. B.} and H. Cho and D. Kumar and Pietambaram, {S. V.} and Singh, {R. K.} and Hogan, {P. H.} and Dahmen, {K. H.} and Hahn, {Y. B.} and Pearton, {S. J.}",

year = "1999",

doi = "10.1557/proc-574-341",

language = "אנגלית",

volume = "574",

pages = "341--346",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium BB: 'Multicomponent Oxide Films for Electronics' ; Conference date: 06-04-1999 Through 08-04-1999",

}

TY - JOUR

T1 - Dry etching to form submicron features in CMR oxides

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium BB: 'Multicomponent Oxide Films for Electronics'

AU - Lee, K. P.

AU - Jung, K. B.

AU - Cho, H.

AU - Kumar, D.

AU - Pietambaram, S. V.

AU - Singh, R. K.

AU - Hogan, P. H.

AU - Dahmen, K. H.

AU - Hahn, Y. B.

AU - Pearton, S. J.

PY - 1999

Y1 - 1999

N2 - Effective pattern transfer into (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3 has been achieved using Cl2/Ar discharges operated under Inductively Coupled Plasma conditions. Etch rates up to 900 A-min"1 for (La,Sr)MnO3 and 300 A-min'1 for (Pr,Ba,Ca)MnOj were obtained, with these rates being a strong function of ion flux, ion energy and ion-to-neutral ratio. The etching is still physically-dominated under all conditions, leading to significant surface smoothing on initially rough samples. Sub-micron (0.35 Um) features have been produced in both materials using SiN, as the mask.

AB - Effective pattern transfer into (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3 has been achieved using Cl2/Ar discharges operated under Inductively Coupled Plasma conditions. Etch rates up to 900 A-min"1 for (La,Sr)MnO3 and 300 A-min'1 for (Pr,Ba,Ca)MnOj were obtained, with these rates being a strong function of ion flux, ion energy and ion-to-neutral ratio. The etching is still physically-dominated under all conditions, leading to significant surface smoothing on initially rough samples. Sub-micron (0.35 Um) features have been produced in both materials using SiN, as the mask.

UR - http://www.scopus.com/inward/record.url?scp=0033279142&partnerID=8YFLogxK

U2 - 10.1557/proc-574-341

DO - 10.1557/proc-574-341

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0033279142

SN - 0272-9172

VL - 574

SP - 341

EP - 346

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 6 April 1999 through 8 April 1999

ER -

Dry etching to form submicron features in CMR oxides: (Pr,Ba,Ca)MnO₃ and (La,Sr)MnO₃

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