Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas

K. P. Lee; K. B. Jung; A. Srivastava; D. Kumar; R. K. Singh; S. J. Pearton

doi:10.1149/1.1392549

Dry etching of BaSrTiO₃ and LaNiO₃ thin films in inductively coupled plasmas

K. P. Lee
, K. B. Jung
, A. Srivastava
, D. Kumar
, R. K. Singh
, S. J. Pearton

University of Florida

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

High density plasma etching of (Ba, Sr)TiO₃ (BST) and LaNiO₃ (LNO) thin films was performed in two different plasma chemistries, Cl₂/Ar and CH₄/H₂/Ar. While the latter chemistry produced extremely low etch rates (≤100 angstroms min^-1) under all conditions, the Cl₂/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of approximately 900 angstroms min^-1 for both materials were achieved with selectivities of approximately 16 for BST and approximately 7 for LNO over Si. A single layer of thick (approximately 7 μm) photoresist is an effective mask under these conditions.

Original language	English
Pages (from-to)	3778-3782
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	146
Issue number	10
DOIs	https://doi.org/10.1149/1.1392549
State	Published - Oct 1999
Externally published	Yes

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@article{ff0b0c9e8976428e88b9b0e68ad2aa37,

title = "Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas",

abstract = "High density plasma etching of (Ba, Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤100 angstroms min-1) under all conditions, the Cl2/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of approximately 900 angstroms min-1 for both materials were achieved with selectivities of approximately 16 for BST and approximately 7 for LNO over Si. A single layer of thick (approximately 7 μm) photoresist is an effective mask under these conditions.",

author = "Lee, \{K. P.\} and Jung, \{K. B.\} and A. Srivastava and D. Kumar and Singh, \{R. K.\} and Pearton, \{S. J.\}",

year = "1999",

month = oct,

doi = "10.1149/1.1392549",

language = "אנגלית",

volume = "146",

pages = "3778--3782",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas

AU - Lee, K. P.

AU - Jung, K. B.

AU - Srivastava, A.

AU - Kumar, D.

AU - Singh, R. K.

AU - Pearton, S. J.

PY - 1999/10

Y1 - 1999/10

N2 - High density plasma etching of (Ba, Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤100 angstroms min-1) under all conditions, the Cl2/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of approximately 900 angstroms min-1 for both materials were achieved with selectivities of approximately 16 for BST and approximately 7 for LNO over Si. A single layer of thick (approximately 7 μm) photoresist is an effective mask under these conditions.

AB - High density plasma etching of (Ba, Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤100 angstroms min-1) under all conditions, the Cl2/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of approximately 900 angstroms min-1 for both materials were achieved with selectivities of approximately 16 for BST and approximately 7 for LNO over Si. A single layer of thick (approximately 7 μm) photoresist is an effective mask under these conditions.

UR - https://www.scopus.com/pages/publications/0033313413

U2 - 10.1149/1.1392549

DO - 10.1149/1.1392549

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0033313413

SN - 0013-4651

VL - 146

SP - 3778

EP - 3782

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 10

ER -

Dry etching of BaSrTiO₃ and LaNiO₃ thin films in inductively coupled plasmas

Abstract

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