Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas

K. P. Lee, K. B. Jung, A. Srivastava, D. Kumar, R. K. Singh, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

High density plasma etching of (Ba, Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤100 angstroms min-1) under all conditions, the Cl2/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of approximately 900 angstroms min-1 for both materials were achieved with selectivities of approximately 16 for BST and approximately 7 for LNO over Si. A single layer of thick (approximately 7 μm) photoresist is an effective mask under these conditions.

Original languageEnglish
Pages (from-to)3778-3782
Number of pages5
JournalJournal of the Electrochemical Society
Volume146
Issue number10
DOIs
StatePublished - Oct 1999
Externally publishedYes

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