Abstract
High density plasma etching of (Ba, Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤100 angstroms min-1) under all conditions, the Cl2/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of approximately 900 angstroms min-1 for both materials were achieved with selectivities of approximately 16 for BST and approximately 7 for LNO over Si. A single layer of thick (approximately 7 μm) photoresist is an effective mask under these conditions.
Original language | English |
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Pages (from-to) | 3778-3782 |
Number of pages | 5 |
Journal | Journal of the Electrochemical Society |
Volume | 146 |
Issue number | 10 |
DOIs | |
State | Published - Oct 1999 |
Externally published | Yes |