Doping of CuInSe2 Crystals: Evidence for Influence of Thermal Defects

David Cahen, Daniel Abecassis, David Soltz

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


Annealing of p-CuInSe2 crystals at low (250–300 °C) and high (600–650 °C) temperatures in the presence of CuInSe2 powder with a variety of (native) dopants showed the temperature rather than the nature of the dopant to be the major factor in determining the resultant carrier type and concentration. Experiments without added dopant indicate, for samples from a different boule, that type conversion occurs upon annealing between 550 and 650 °C. These results can be explained by thermally induced changes in relative concentrations of intrinsic defects (that were frozen in during crystal cooling) via complex formation and temperature-dependent ionization of defects and their complexes.

Original languageEnglish
Pages (from-to)202-207
Number of pages6
JournalChemistry of Materials
Issue number2
StatePublished - Mar 1989
Externally publishedYes


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