Doping modulation of self-induced electric field (SIEF) in asymmetric GaAs/GaAlAs/GaAs quantum wells

Ariel Khakshoor, Jérémy Belhassen, Michael Bendayan, Avi Karsenty

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

GaAs/GaAlAs/GaAs Asymmetric Quantum Wells (AQW) have shown in the past multiple advantages in the domain of inter-sub-band transition (ISBT) while serving as the basic structures for advanced electro-optical devices. A new approach enables to create and control the modulation of Self-Induced Electrical Fields (SIEF), as a function of the dopant concentration variation in the structure. Combined numerical and analytical analyses present a smart way to design such structures towards their future integration in advanced devices. The results are obtained by means of Comsol software which needed solid and creative adaptations in order to deal with this kind of challenging structure.

Original languageEnglish
Article number105093
JournalResults in Physics
Volume32
DOIs
StatePublished - Jan 2022

Bibliographical note

Publisher Copyright:
© 2021 The Authors

Keywords

  • Asymmetric quantum well structure
  • Doping modulation
  • GaAs
  • Numerical and analytical analyses
  • Schrödinger-poisson equation
  • Self-induced electric field (SIEF)

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