Dopant accumulation during substitutional-interstitial diffusion in semiconductors

Igor Lyubomirsky, Vera Lyahovitskaya, David Cahen

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

When p-n junctions are formed by doping with a dopant that diffuses via a dissociative diffusion mechanism, dopant diffusion is suppressed and dopants can pile up near the junction, well above their original concentration. Calculations confirm this, if no local neutrality is assumed. The results agree well with published and our own experimental data for Zn diffusion in InP. The increased built-in electric field due to this pileup is expelled nearly completely to the side of the junction without the pileup. This effect has important consequences for devices containing thin and/or small regions doped with such dopants because such regions may be completely depleted.

Original languageEnglish
Pages (from-to)613-615
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number5
DOIs
StatePublished - 3 Feb 1997
Externally publishedYes

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