Abstract
In-plane uniaxial stress is used to tune continuously the mixing between the heavy-hole (HH) and light-hole (LH) states in a p-type double-barrier structure. The LH1 and HH2 resonant tunneling peaks shift at almost the same rate with stress, in contrast to the corresponding exciton peaks observed by photoreflectance, which exhibit a strong Fano-related anticrossing. Comparison between the observed shifts and a four-band [Formula presented] calculation of the state energies in the well provides the first experimental proof that the flow of holes through off-zone center states dominates the resonant tunneling current in p-type structures.
Original language | English |
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Pages (from-to) | 4 |
Number of pages | 1 |
Journal | Physical Review Letters |
Volume | 88 |
Issue number | 12 |
DOIs | |
State | Published - 2002 |
Externally published | Yes |