Abstract
This paper explores performance of non-volatile ternary content addressable memories (NV-TCAMs), exploiting double-barrier magnetic tunnel junction (DMTJ) as comparatively evaluated with respect to the single barrier MTJ (SMTJ)-based solution. The comparison is performed at the circuit-level, considering different memory words. Overall, simulation results show that the DMTJ-based NV-TCAM is a good alternative to replace SMTJ-based NV-TCAM, mainly due to the search operation improvement. In particular, for a 144-bit NV-TCAM word operating at a nominal voltage of 1.1 V, the DMTJ-based solution offers improvements in terms of energy and search error rate of 14% and 66%, respectively, while showing similar search delay as the SMTJ-based NV-TCAM.
| Original language | English |
|---|---|
| Title of host publication | 2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781665420082 |
| DOIs | |
| State | Published - 2022 |
| Externally published | Yes |
| Event | 13th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2022 - Santiago, Chile Duration: 1 Mar 2022 → 4 Mar 2022 |
Publication series
| Name | 2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022 |
|---|
Conference
| Conference | 13th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2022 |
|---|---|
| Country/Territory | Chile |
| City | Santiago |
| Period | 1/03/22 → 4/03/22 |
Bibliographical note
Publisher Copyright:© 2022 IEEE.
Keywords
- Double-barrier magnetic tunnel junction
- Ternary content-addressable memories
- energy-efficiency