Abstract
Low-temperature conduction in a batch of plastically deformed ″pure″ germanium samples was investigated. An analysis of the temperature, field, frequency, and strain dependences of the resistivity indicated the hopping of localized carriers between dislocations in the low-strain range and the motion of delocalized carriers in a dislocation band in the high-strain range.
| Original language | English |
|---|---|
| Pages (from-to) | 638-641 |
| Number of pages | 4 |
| Journal | Soviet physics. Semiconductors |
| Volume | 13 |
| Issue number | 6 |
| State | Published - 1979 |