Discontinuous molecular films can control metal/semiconductor junctions

The use of discontinuous molecular films in controlling semiconductor junctions was analyzed. The photoelectrical measurements were performed on bare and molecularly modified structures on Au/n-GaAs and Au/MoL/n-GaAs devices. It was found that the electrostatic influence of the molecular dipole domains in the heavily doped samples effected the entire (semiconductor region below the) pinhole areas. The results show that the molecularly modified samples, analytical solution of the electrostatic potential at the Au/GaAs interface support the existence of distinct dipole domains.