Discontinuous molecular films can control metal/semiconductor junctions

Hossam Haick, Marianna Ambrico, Teresa Ligonzo, David Cahen

Research output: Contribution to journalArticlepeer-review

48 Scopus citations


The use of discontinuous molecular films in controlling semiconductor junctions was analyzed. The photoelectrical measurements were performed on bare and molecularly modified structures on Au/n-GaAs and Au/MoL/n-GaAs devices. It was found that the electrostatic influence of the molecular dipole domains in the heavily doped samples effected the entire (semiconductor region below the) pinhole areas. The results show that the molecularly modified samples, analytical solution of the electrostatic potential at the Au/GaAs interface support the existence of distinct dipole domains.

Original languageEnglish
Pages (from-to)2145-2151
Number of pages7
JournalAdvanced Materials
Issue number23-24
StatePublished - 27 Dec 2004
Externally publishedYes


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