Direct observation of porous SiC formed by anodization in HF

Joseph S. Shor; Ilana Grimberg; Ben Zion Weiss; Anthony D. Kurtz

doi:10.1063/1.109226

Direct observation of porous SiC formed by anodization in HF

Joseph S. Shor
, Ilana Grimberg
, Ben Zion Weiss
, Anthony D. Kurtz

Kulite Semiconductor Products, Inc.
Technion-Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

179 Scopus citations

Abstract

A process for forming porous SiC from single-crystal SiC wafers has been demonstrated. Porous SiC can be fabricated by anodizing n-type 6H-SiC in HF under UV illumination. Transmission electron microscopy reveals pores of sizes 10-30 nm with interpore spacings ranging from ≊5 to 150 nm. This is the first reported direct observation of porous SiC formation.

Original language	English
Pages (from-to)	2836-2838
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	22
DOIs	https://doi.org/10.1063/1.109226
State	Published - 1993
Externally published	Yes

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10.1063/1.109226

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title = "Direct observation of porous SiC formed by anodization in HF",

abstract = "A process for forming porous SiC from single-crystal SiC wafers has been demonstrated. Porous SiC can be fabricated by anodizing n-type 6H-SiC in HF under UV illumination. Transmission electron microscopy reveals pores of sizes 10-30 nm with interpore spacings ranging from ≊5 to 150 nm. This is the first reported direct observation of porous SiC formation.",

author = "Shor, \{Joseph S.\} and Ilana Grimberg and Weiss, \{Ben Zion\} and Kurtz, \{Anthony D.\}",

year = "1993",

doi = "10.1063/1.109226",

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journal = "Applied Physics Letters",

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T1 - Direct observation of porous SiC formed by anodization in HF

AU - Shor, Joseph S.

AU - Grimberg, Ilana

AU - Weiss, Ben Zion

AU - Kurtz, Anthony D.

PY - 1993

Y1 - 1993

N2 - A process for forming porous SiC from single-crystal SiC wafers has been demonstrated. Porous SiC can be fabricated by anodizing n-type 6H-SiC in HF under UV illumination. Transmission electron microscopy reveals pores of sizes 10-30 nm with interpore spacings ranging from ≊5 to 150 nm. This is the first reported direct observation of porous SiC formation.

AB - A process for forming porous SiC from single-crystal SiC wafers has been demonstrated. Porous SiC can be fabricated by anodizing n-type 6H-SiC in HF under UV illumination. Transmission electron microscopy reveals pores of sizes 10-30 nm with interpore spacings ranging from ≊5 to 150 nm. This is the first reported direct observation of porous SiC formation.

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DO - 10.1063/1.109226

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VL - 62

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

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Direct observation of porous SiC formed by anodization in HF

Abstract

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