Abstract
Raman scattering (RS) spectra were measured in samples of germanium nanocrystals (Ge-NC) prepared by ion-implantation of 74Ge and 70Ge isotopes into an amorphous SiO2 layer initially grown on a Si 〈 100 〉 surface. A rich multiple-peak structure has been detected in addition to the well-known Ge-Ge peak at about 300 cm-1 of bulk Ge. Specifically, new 74Ge-NC-related peaks centered around 202 cm-1, 217 cm-1, and 317 cm-1 were directly observed as verified by isotopic Raman shift in 70Ge-NC samples. Lorentzian line shape fit of the RS spectra implies the existence of two additional Ge-related vibration modes around 260 cm-1 and 360 cm -1. The origin of each of the Ge related peaks was determined using a theoretical calculation based on the harmonic approximation.
Original language | English |
---|---|
Article number | 044312 |
Journal | Journal of Applied Physics |
Volume | 113 |
Issue number | 4 |
DOIs | |
State | Published - 28 Jan 2013 |