Direct graphene growth from highly ordered pyrolytic graphite using pulsed Nd: YAG laser on p-Si (100) substrate at 700°c

Pramod Kumar, Indranil Lahiri, Anirban Mitra

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Few layer graphene was deposited on p-Type Si (I00) substrates by pulsed laser deposition of highly ordered pyrolytic graphite (HOPG) target at a relatively low temperature of 700 °C, without any catalytic layer. Effect of laser energy on the ability to produce the crystalline graphene was studied. It was observed that a laser energy of 220 mJ/pulse lead to form few layer graphene while higher laser energy of 440 mJ/pulse was detrimental to precipitation process. The reasons behind this observation are also discussed. Graphene samples were analyzed using Raman spectroscopy and surface morphology of graphene samples was confirmed using field emission scanning electron microscope (FE-SEM).

Original languageEnglish
Title of host publicationInternational Conference on Condensed Matter and Applied Physics, ICC 2015
Subtitle of host publicationProceeding of International Conference on Condensed Matter and Applied Physics
EditorsManoj Singh Shekhawat, Sudhir Bhardwaj, Bhuvneshwer Suthar
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735413757
DOIs
StatePublished - 6 May 2016
Externally publishedYes
EventInternational Conference on Condensed Matter and Applied Physics, ICC 2015 - Bikaner, India
Duration: 30 Oct 201531 Oct 2015

Publication series

NameAIP Conference Proceedings
Volume1728
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceInternational Conference on Condensed Matter and Applied Physics, ICC 2015
Country/TerritoryIndia
CityBikaner
Period30/10/1531/10/15

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

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