Abstract
Few layer graphene was deposited on p-Type Si (I00) substrates by pulsed laser deposition of highly ordered pyrolytic graphite (HOPG) target at a relatively low temperature of 700 °C, without any catalytic layer. Effect of laser energy on the ability to produce the crystalline graphene was studied. It was observed that a laser energy of 220 mJ/pulse lead to form few layer graphene while higher laser energy of 440 mJ/pulse was detrimental to precipitation process. The reasons behind this observation are also discussed. Graphene samples were analyzed using Raman spectroscopy and surface morphology of graphene samples was confirmed using field emission scanning electron microscope (FE-SEM).
| Original language | English |
|---|---|
| Title of host publication | International Conference on Condensed Matter and Applied Physics, ICC 2015 |
| Subtitle of host publication | Proceeding of International Conference on Condensed Matter and Applied Physics |
| Editors | Manoj Singh Shekhawat, Sudhir Bhardwaj, Bhuvneshwer Suthar |
| Publisher | American Institute of Physics Inc. |
| ISBN (Electronic) | 9780735413757 |
| DOIs | |
| State | Published - 6 May 2016 |
| Externally published | Yes |
| Event | International Conference on Condensed Matter and Applied Physics, ICC 2015 - Bikaner, India Duration: 30 Oct 2015 → 31 Oct 2015 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1728 |
| ISSN (Print) | 0094-243X |
| ISSN (Electronic) | 1551-7616 |
Conference
| Conference | International Conference on Condensed Matter and Applied Physics, ICC 2015 |
|---|---|
| Country/Territory | India |
| City | Bikaner |
| Period | 30/10/15 → 31/10/15 |
Bibliographical note
Publisher Copyright:© 2016 Author(s).