Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements

Iris Visoly-Fisher; Sidney R. Cohen; David Cahen

doi:10.1063/1.1542926

Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements

Iris Visoly-Fisher, Sidney R. Cohen, David Cahen

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

The direct characterization of a single grain boundary (GB) and a single grain surface in solar cell-quality CdTe was performed using scanning probe microscopy. It was found that scanning capacitance microscopy could be used to study polycrystalline electronic materials. The presence of a barrier for hole transport across GB in solar-cell quality CdTe was also observed.

Original language	English
Pages (from-to)	556-558
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	4
DOIs	https://doi.org/10.1063/1.1542926
State	Published - 27 Jan 2003
Externally published	Yes

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10.1063/1.1542926

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abstract = "The direct characterization of a single grain boundary (GB) and a single grain surface in solar cell-quality CdTe was performed using scanning probe microscopy. It was found that scanning capacitance microscopy could be used to study polycrystalline electronic materials. The presence of a barrier for hole transport across GB in solar-cell quality CdTe was also observed.",

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N2 - The direct characterization of a single grain boundary (GB) and a single grain surface in solar cell-quality CdTe was performed using scanning probe microscopy. It was found that scanning capacitance microscopy could be used to study polycrystalline electronic materials. The presence of a barrier for hole transport across GB in solar-cell quality CdTe was also observed.

AB - The direct characterization of a single grain boundary (GB) and a single grain surface in solar cell-quality CdTe was performed using scanning probe microscopy. It was found that scanning capacitance microscopy could be used to study polycrystalline electronic materials. The presence of a barrier for hole transport across GB in solar-cell quality CdTe was also observed.

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Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements

Abstract

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