TY - JOUR
T1 - Direct evidence for diffusion and electromigration of Cu in CuInSe2
AU - Gartsman, Konstantin
AU - Chernyak, Leonid
AU - Lyahovitskaya, Vera
AU - Cahen, David
AU - Didik, Vladimir
AU - Kozlovsky, Vitaliy
AU - Malkovich, Roald
AU - Skoryatina, Elena
AU - Usacheva, Valentina
PY - 1997/11/1
Y1 - 1997/11/1
N2 - Cu diffusion in chalcopyrite CuInSe2 was studied directly, using 64Cu as a radioactive tracer. For diffusion from a thin surface layer, the Cu diffusion coefficients at 380 and 430 °C, were found to vary from 10-8 to 10-9 cm2/s. In case of diffusion from a volume source at 400 °C, a value of 10-10 cm2/s was calculated from diffusion profiles. Electromigration of Cu was demonstrated, by applying a strong electric field to a sample and following the redistribution of 64Cu, that had been thermally diffused into the sample, prior to electric field application.
AB - Cu diffusion in chalcopyrite CuInSe2 was studied directly, using 64Cu as a radioactive tracer. For diffusion from a thin surface layer, the Cu diffusion coefficients at 380 and 430 °C, were found to vary from 10-8 to 10-9 cm2/s. In case of diffusion from a volume source at 400 °C, a value of 10-10 cm2/s was calculated from diffusion profiles. Electromigration of Cu was demonstrated, by applying a strong electric field to a sample and following the redistribution of 64Cu, that had been thermally diffused into the sample, prior to electric field application.
UR - http://www.scopus.com/inward/record.url?scp=0000493087&partnerID=8YFLogxK
U2 - 10.1063/1.366252
DO - 10.1063/1.366252
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AN - SCOPUS:0000493087
SN - 0021-8979
VL - 82
SP - 4282
EP - 4285
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 9
ER -