Direct determination of epitaxial film and interface structure: Gd2O3 on GaAs (1 0 0)

Yizhak Yacoby; Mukhles Sowwan; Edward Stern; Julie Cross; Dale Brewe; Ron Pindak; John Pitney; Eric B. Dufresne; Roy Clarke

doi:10.1016/s0921-4526(03)00267-9

Direct determination of epitaxial film and interface structure: Gd₂O₃ on GaAs (1 0 0)

Yizhak Yacoby, Mukhles Sowwan, Edward Stern, Julie Cross, Dale Brewe, Ron Pindak, John Pitney, Eric B. Dufresne, Roy Clarke

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

We present a new method of sub-Angstrom resolution imaging of the 3D structure of epitaxial films and their interface with the substrate. The method utilizes the diffraction intensities along the substrate-defined Bragg rods and some crude knowledge of the system structure to determine the complex scattering factors (CSFs) along the Bragg rods. The system electron density and the structure is obtained by Fourier transforming the CSFs into real space. We have applied this method to study the structure of a Gd₂O₃ film and its interface with the GaAs substrate. The results show that the Gd₂O₃ abandons the bulk stacking order and adopts that of GaAs. Moreover, the atoms in the first few layers move to in-plane positions that overlap those of the underlying Ga and As. This behavior may be at the heart of its ability to passivate GaAs.

Original language	English
Pages (from-to)	39-45
Number of pages	7
Journal	Physica B: Condensed Matter
Volume	336
Issue number	1-2
DOIs	https://doi.org/10.1016/s0921-4526(03)00267-9
State	Published - Aug 2003
Externally published	Yes
Event	Proceedings of the 7th SXNS - Lake Tahoe, CA, United States Duration: 23 Sep 2002 → 27 Sep 2002

Keywords

Diffraction phase
Passivation layer
X-ray diffraction

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10.1016/s0921-4526(03)00267-9

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title = "Direct determination of epitaxial film and interface structure: Gd2O3 on GaAs (1 0 0)",

abstract = "We present a new method of sub-Angstrom resolution imaging of the 3D structure of epitaxial films and their interface with the substrate. The method utilizes the diffraction intensities along the substrate-defined Bragg rods and some crude knowledge of the system structure to determine the complex scattering factors (CSFs) along the Bragg rods. The system electron density and the structure is obtained by Fourier transforming the CSFs into real space. We have applied this method to study the structure of a Gd2O3 film and its interface with the GaAs substrate. The results show that the Gd2O3 abandons the bulk stacking order and adopts that of GaAs. Moreover, the atoms in the first few layers move to in-plane positions that overlap those of the underlying Ga and As. This behavior may be at the heart of its ability to passivate GaAs.",

keywords = "Diffraction phase, Passivation layer, X-ray diffraction",

author = "Yizhak Yacoby and Mukhles Sowwan and Edward Stern and Julie Cross and Dale Brewe and Ron Pindak and John Pitney and Dufresne, {Eric B.} and Roy Clarke",

year = "2003",

month = aug,

doi = "10.1016/s0921-4526(03)00267-9",

language = "אנגלית",

volume = "336",

pages = "39--45",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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number = "1-2",

note = "Proceedings of the 7th SXNS ; Conference date: 23-09-2002 Through 27-09-2002",

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T1 - Direct determination of epitaxial film and interface structure

T2 - Proceedings of the 7th SXNS

AU - Yacoby, Yizhak

AU - Sowwan, Mukhles

AU - Stern, Edward

AU - Cross, Julie

AU - Brewe, Dale

AU - Pindak, Ron

AU - Pitney, John

AU - Dufresne, Eric B.

AU - Clarke, Roy

PY - 2003/8

Y1 - 2003/8

N2 - We present a new method of sub-Angstrom resolution imaging of the 3D structure of epitaxial films and their interface with the substrate. The method utilizes the diffraction intensities along the substrate-defined Bragg rods and some crude knowledge of the system structure to determine the complex scattering factors (CSFs) along the Bragg rods. The system electron density and the structure is obtained by Fourier transforming the CSFs into real space. We have applied this method to study the structure of a Gd2O3 film and its interface with the GaAs substrate. The results show that the Gd2O3 abandons the bulk stacking order and adopts that of GaAs. Moreover, the atoms in the first few layers move to in-plane positions that overlap those of the underlying Ga and As. This behavior may be at the heart of its ability to passivate GaAs.

AB - We present a new method of sub-Angstrom resolution imaging of the 3D structure of epitaxial films and their interface with the substrate. The method utilizes the diffraction intensities along the substrate-defined Bragg rods and some crude knowledge of the system structure to determine the complex scattering factors (CSFs) along the Bragg rods. The system electron density and the structure is obtained by Fourier transforming the CSFs into real space. We have applied this method to study the structure of a Gd2O3 film and its interface with the GaAs substrate. The results show that the Gd2O3 abandons the bulk stacking order and adopts that of GaAs. Moreover, the atoms in the first few layers move to in-plane positions that overlap those of the underlying Ga and As. This behavior may be at the heart of its ability to passivate GaAs.

KW - Diffraction phase

KW - Passivation layer

KW - X-ray diffraction

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JF - Physica B: Condensed Matter

IS - 1-2

Y2 - 23 September 2002 through 27 September 2002

ER -

Direct determination of epitaxial film and interface structure: Gd₂O₃ on GaAs (1 0 0)

Abstract

Keywords

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